Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate

Shaocheng Qi,1 Yongbin Hu,1 Chaoqi Dai,1 Peiqin Chen,1 Zhendong Wu,1 Thomas J Webster,2 Mingzhi Dai1,3 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 2Department of Chemical Engineering, Northeastern Univer...

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Autores principales:	Qi S, Hu Y, Dai C, Chen P, Wu Z, Webster TJ, Dai M
Formato:	article
Lenguaje:	EN
Publicado:	Dove Medical Press 2020
Materias:	artificial synapse thin-film transistor channel-electrode transistor neuron behavior control Medicine (General) R5-920
Acceso en línea:	https://doaj.org/article/0c35638c06d24714b06f9d6c7ca5f5f7
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spelling	oai:doaj.org-article:0c35638c06d24714b06f9d6c7ca5f5f72021-12-02T12:14:46ZShort Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate1178-2013https://doaj.org/article/0c35638c06d24714b06f9d6c7ca5f5f72020-08-01T00:00:00Zhttps://www.dovepress.com/short-communication-an-updated-design-to-implement-artificial-neuron-s-peer-reviewed-article-IJNhttps://doaj.org/toc/1178-2013Shaocheng Qi,1 Yongbin Hu,1 Chaoqi Dai,1 Peiqin Chen,1 Zhendong Wu,1 Thomas J Webster,2 Mingzhi Dai1,3 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 2Department of Chemical Engineering, Northeastern University, Boston, MA, USA; 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of ChinaCorrespondence: Thomas J Webster Department of Chemical EngineeringNortheastern University, Boston, MA, USAEmail th.webster@neu.eduMingzhi DaiNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaEmail daimz@nimte.ac.cnBackground: As a key component in artificial intelligence computing, a transistor design is updated here as a potential alternative candidate for artificial synaptic behavior implementation. However, further updates are needed to better control artificial synaptic behavior. Here, an updated channel-electrode transistor design is proposed as an artificial synapse device; this structure is different from previously published designs by other groups.Methods: A semiconductor characterization system was used in order to simulate the artificial synaptic behavior and a scanning electron microscope was used to characterize the device structure.Results: It was found that the electrode added to the transistor channel had a strong impact on the representative transmission behavior of such artificial synaptic devices, such as excitatory postsynaptic current (EPSC) and the paired-pulse facilitation (PPF) index.Conclusion: These behaviors were tuned effectively and the impact of the channel electrode is explained by the combined effects of the joint channel electrode and conventional gate. The voltage dependence of such oxide devices suggests more capability to emulate various synaptic behaviors for numerous medical and non-medical applications. This is extremely helpful for future neuromorphic computational system implementation.Keywords: artificial synapse, thin-film transistor, channel-electrode transistor, neuron behavior controlQi SHu YDai CChen PWu ZWebster TJDai MDove Medical Pressarticleartificial synapsethin-film transistorchannel-electrode transistorneuron behavior controlMedicine (General)R5-920ENInternational Journal of Nanomedicine, Vol Volume 15, Pp 6239-6245 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	artificial synapse thin-film transistor channel-electrode transistor neuron behavior control Medicine (General) R5-920
spellingShingle	artificial synapse thin-film transistor channel-electrode transistor neuron behavior control Medicine (General) R5-920 Qi S Hu Y Dai C Chen P Wu Z Webster TJ Dai M Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate
description	Shaocheng Qi,1 Yongbin Hu,1 Chaoqi Dai,1 Peiqin Chen,1 Zhendong Wu,1 Thomas J Webster,2 Mingzhi Dai1,3 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 2Department of Chemical Engineering, Northeastern University, Boston, MA, USA; 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of ChinaCorrespondence: Thomas J Webster Department of Chemical EngineeringNortheastern University, Boston, MA, USAEmail th.webster@neu.eduMingzhi DaiNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaEmail daimz@nimte.ac.cnBackground: As a key component in artificial intelligence computing, a transistor design is updated here as a potential alternative candidate for artificial synaptic behavior implementation. However, further updates are needed to better control artificial synaptic behavior. Here, an updated channel-electrode transistor design is proposed as an artificial synapse device; this structure is different from previously published designs by other groups.Methods: A semiconductor characterization system was used in order to simulate the artificial synaptic behavior and a scanning electron microscope was used to characterize the device structure.Results: It was found that the electrode added to the transistor channel had a strong impact on the representative transmission behavior of such artificial synaptic devices, such as excitatory postsynaptic current (EPSC) and the paired-pulse facilitation (PPF) index.Conclusion: These behaviors were tuned effectively and the impact of the channel electrode is explained by the combined effects of the joint channel electrode and conventional gate. The voltage dependence of such oxide devices suggests more capability to emulate various synaptic behaviors for numerous medical and non-medical applications. This is extremely helpful for future neuromorphic computational system implementation.Keywords: artificial synapse, thin-film transistor, channel-electrode transistor, neuron behavior control
format	article
author	Qi S Hu Y Dai C Chen P Wu Z Webster TJ Dai M
author_facet	Qi S Hu Y Dai C Chen P Wu Z Webster TJ Dai M
author_sort	Qi S
title	Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate
title_short	Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate
title_full	Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate
title_fullStr	Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate
title_full_unstemmed	Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate
title_sort	short communication: an updated design to implement artificial neuron synaptic behaviors in one device with a control gate
publisher	Dove Medical Press
publishDate	2020
url	https://doaj.org/article/0c35638c06d24714b06f9d6c7ca5f5f7
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Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate

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