Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiN<sub>x</sub>) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. The mechanism of...

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Autores principales:	Yiming Liu, Chang Liu, Houyun Qin, Chong Peng, Mingxin Lu, Zhanguo Chen, Yi Zhao
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	thin-film transistor InGaZnO interface traps plasma oxidation NBIS Chemical technology TP1-1185 Chemical engineering TP155-156
Acceso en línea:	https://doaj.org/article/0cca4dc1b7b749e685b0287fe2b32eb8
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spelling	oai:doaj.org-article:0cca4dc1b7b749e685b0287fe2b32eb82021-11-25T18:20:15ZSteep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric10.3390/membranes111109022077-0375https://doaj.org/article/0cca4dc1b7b749e685b0287fe2b32eb82021-11-01T00:00:00Zhttps://www.mdpi.com/2077-0375/11/11/902https://doaj.org/toc/2077-0375In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiN<sub>x</sub>) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. The mechanism of the high-performance InGaZnO TFT with plasma-oxidized SiN<sub>x</sub> gate dielectric was also explored. The X-ray photoelectron spectroscopy (XPS) results confirmed that an oxygen-rich layer formed on the surface of the SiN<sub>x</sub> layer and the amount of oxygen vacancy near the interface between SiN<sub>x</sub> and InGaZnO layer was suppressed via pre-implanted oxygen on SiN<sub>x</sub> gate dielectric before deposition of the InGaZnO channel layer. Moreover, the conductance method was employed to directly extract the density of the interface trap (<i>D<sub>it</sub></i>) in InGaZnO TFT to verify the reduction in oxygen vacancy after plasma oxidation. The proposed InGaZnO TFT with plasma oxidation exhibited a field-effect mobility of 16.46 cm<sup>2</sup>/V·s, threshold voltage (<i>V<sub>th</sub></i>) of −0.10 V, <i>I<sub>on</sub></i>/<i>I<sub>off</sub></i> over 10<sup>8</sup>, SS of 97 mV/decade, and <i>V<sub>th</sub></i> shift of −0.37 V after NBIS. The plasma oxidation on SiN<sub>x</sub> gate dielectric provides a novel approach for suppressing the interface trap for high-performance InGaZnO TFT.Yiming LiuChang LiuHouyun QinChong PengMingxin LuZhanguo ChenYi ZhaoMDPI AGarticlethin-film transistorInGaZnOinterface trapsplasma oxidationNBISChemical technologyTP1-1185Chemical engineeringTP155-156ENMembranes, Vol 11, Iss 902, p 902 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	thin-film transistor InGaZnO interface traps plasma oxidation NBIS Chemical technology TP1-1185 Chemical engineering TP155-156
spellingShingle	thin-film transistor InGaZnO interface traps plasma oxidation NBIS Chemical technology TP1-1185 Chemical engineering TP155-156 Yiming Liu Chang Liu Houyun Qin Chong Peng Mingxin Lu Zhanguo Chen Yi Zhao Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
description	In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiN<sub>x</sub>) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. The mechanism of the high-performance InGaZnO TFT with plasma-oxidized SiN<sub>x</sub> gate dielectric was also explored. The X-ray photoelectron spectroscopy (XPS) results confirmed that an oxygen-rich layer formed on the surface of the SiN<sub>x</sub> layer and the amount of oxygen vacancy near the interface between SiN<sub>x</sub> and InGaZnO layer was suppressed via pre-implanted oxygen on SiN<sub>x</sub> gate dielectric before deposition of the InGaZnO channel layer. Moreover, the conductance method was employed to directly extract the density of the interface trap (<i>D<sub>it</sub></i>) in InGaZnO TFT to verify the reduction in oxygen vacancy after plasma oxidation. The proposed InGaZnO TFT with plasma oxidation exhibited a field-effect mobility of 16.46 cm<sup>2</sup>/V·s, threshold voltage (<i>V<sub>th</sub></i>) of −0.10 V, <i>I<sub>on</sub></i>/<i>I<sub>off</sub></i> over 10<sup>8</sup>, SS of 97 mV/decade, and <i>V<sub>th</sub></i> shift of −0.37 V after NBIS. The plasma oxidation on SiN<sub>x</sub> gate dielectric provides a novel approach for suppressing the interface trap for high-performance InGaZnO TFT.
format	article
author	Yiming Liu Chang Liu Houyun Qin Chong Peng Mingxin Lu Zhanguo Chen Yi Zhao
author_facet	Yiming Liu Chang Liu Houyun Qin Chong Peng Mingxin Lu Zhanguo Chen Yi Zhao
author_sort	Yiming Liu
title	Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
title_short	Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
title_full	Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
title_fullStr	Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
title_full_unstemmed	Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
title_sort	steep subthreshold swing and enhanced illumination stability ingazno thin-film transistor by plasma oxidation on silicon nitride gate dielectric
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/0cca4dc1b7b749e685b0287fe2b32eb8
work_keys_str_mv	AT yimingliu steepsubthresholdswingandenhancedilluminationstabilityingaznothinfilmtransistorbyplasmaoxidationonsiliconnitridegatedielectric AT changliu steepsubthresholdswingandenhancedilluminationstabilityingaznothinfilmtransistorbyplasmaoxidationonsiliconnitridegatedielectric AT houyunqin steepsubthresholdswingandenhancedilluminationstabilityingaznothinfilmtransistorbyplasmaoxidationonsiliconnitridegatedielectric AT chongpeng steepsubthresholdswingandenhancedilluminationstabilityingaznothinfilmtransistorbyplasmaoxidationonsiliconnitridegatedielectric AT mingxinlu steepsubthresholdswingandenhancedilluminationstabilityingaznothinfilmtransistorbyplasmaoxidationonsiliconnitridegatedielectric AT zhanguochen steepsubthresholdswingandenhancedilluminationstabilityingaznothinfilmtransistorbyplasmaoxidationonsiliconnitridegatedielectric AT yizhao steepsubthresholdswingandenhancedilluminationstabilityingaznothinfilmtransistorbyplasmaoxidationonsiliconnitridegatedielectric
_version_	1718411302340132864

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

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