Electron aspirator using electron–electron scattering in nanoscale silicon
Power dissipation is usually unavoidable in transistor channels due to the inelastic scattering of electrons. Here, Firdaus et al. propose a nanoscaled silicon electron-aspirator to remove this constraint, which shows enhanced current output by 3 times at 8 K without additional power supply.
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/0d067b9c917743c797297119180bb47c |
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| Sumario: | Power dissipation is usually unavoidable in transistor channels due to the inelastic scattering of electrons. Here, Firdaus et al. propose a nanoscaled silicon electron-aspirator to remove this constraint, which shows enhanced current output by 3 times at 8 K without additional power supply. |
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