Electron aspirator using electron–electron scattering in nanoscale silicon

Power dissipation is usually unavoidable in transistor channels due to the inelastic scattering of electrons. Here, Firdaus et al. propose a nanoscaled silicon electron-aspirator to remove this constraint, which shows enhanced current output by 3 times at 8 K without additional power supply.

Guardado en:
Detalles Bibliográficos
Autores principales: Himma Firdaus, Tokinobu Watanabe, Masahiro Hori, Daniel Moraru, Yasuo Takahashi, Akira Fujiwara, Yukinori Ono
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Q
Acceso en línea:https://doaj.org/article/0d067b9c917743c797297119180bb47c
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
Descripción
Sumario:Power dissipation is usually unavoidable in transistor channels due to the inelastic scattering of electrons. Here, Firdaus et al. propose a nanoscaled silicon electron-aspirator to remove this constraint, which shows enhanced current output by 3 times at 8 K without additional power supply.