Electron aspirator using electron–electron scattering in nanoscale silicon

Power dissipation is usually unavoidable in transistor channels due to the inelastic scattering of electrons. Here, Firdaus et al. propose a nanoscaled silicon electron-aspirator to remove this constraint, which shows enhanced current output by 3 times at 8 K without additional power supply.

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Autores principales: Himma Firdaus, Tokinobu Watanabe, Masahiro Hori, Daniel Moraru, Yasuo Takahashi, Akira Fujiwara, Yukinori Ono
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/0d067b9c917743c797297119180bb47c
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spelling oai:doaj.org-article:0d067b9c917743c797297119180bb47c2021-12-02T17:33:05ZElectron aspirator using electron–electron scattering in nanoscale silicon10.1038/s41467-018-07278-82041-1723https://doaj.org/article/0d067b9c917743c797297119180bb47c2018-12-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-07278-8https://doaj.org/toc/2041-1723Power dissipation is usually unavoidable in transistor channels due to the inelastic scattering of electrons. Here, Firdaus et al. propose a nanoscaled silicon electron-aspirator to remove this constraint, which shows enhanced current output by 3 times at 8 K without additional power supply.Himma FirdausTokinobu WatanabeMasahiro HoriDaniel MoraruYasuo TakahashiAkira FujiwaraYukinori OnoNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Himma Firdaus
Tokinobu Watanabe
Masahiro Hori
Daniel Moraru
Yasuo Takahashi
Akira Fujiwara
Yukinori Ono
Electron aspirator using electron–electron scattering in nanoscale silicon
description Power dissipation is usually unavoidable in transistor channels due to the inelastic scattering of electrons. Here, Firdaus et al. propose a nanoscaled silicon electron-aspirator to remove this constraint, which shows enhanced current output by 3 times at 8 K without additional power supply.
format article
author Himma Firdaus
Tokinobu Watanabe
Masahiro Hori
Daniel Moraru
Yasuo Takahashi
Akira Fujiwara
Yukinori Ono
author_facet Himma Firdaus
Tokinobu Watanabe
Masahiro Hori
Daniel Moraru
Yasuo Takahashi
Akira Fujiwara
Yukinori Ono
author_sort Himma Firdaus
title Electron aspirator using electron–electron scattering in nanoscale silicon
title_short Electron aspirator using electron–electron scattering in nanoscale silicon
title_full Electron aspirator using electron–electron scattering in nanoscale silicon
title_fullStr Electron aspirator using electron–electron scattering in nanoscale silicon
title_full_unstemmed Electron aspirator using electron–electron scattering in nanoscale silicon
title_sort electron aspirator using electron–electron scattering in nanoscale silicon
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/0d067b9c917743c797297119180bb47c
work_keys_str_mv AT himmafirdaus electronaspiratorusingelectronelectronscatteringinnanoscalesilicon
AT tokinobuwatanabe electronaspiratorusingelectronelectronscatteringinnanoscalesilicon
AT masahirohori electronaspiratorusingelectronelectronscatteringinnanoscalesilicon
AT danielmoraru electronaspiratorusingelectronelectronscatteringinnanoscalesilicon
AT yasuotakahashi electronaspiratorusingelectronelectronscatteringinnanoscalesilicon
AT akirafujiwara electronaspiratorusingelectronelectronscatteringinnanoscalesilicon
AT yukinoriono electronaspiratorusingelectronelectronscatteringinnanoscalesilicon
_version_ 1718380044269649920