Self-assembled Cubic Boron Nitride Nanodots

Abstract One of the low-dimensional Boron Nitride (BN) forms, namely, cubic-BN (c-BN) nanodots (NDs), offers a variety of novel opportunities in battery, biology, deep ultraviolet light emitting diodes, sensors, filters, and other optoelectronic applications. To date, the attempts towards producing...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Alireza Khanaki, Zhongguang Xu, Hao Tian, Renjing Zheng, Zheng Zuo, Jian-Guo Zheng, Jianlin Liu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
R
Q
Acceso en línea:https://doaj.org/article/0db4ca40a6c24e709631cddad100c857
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:0db4ca40a6c24e709631cddad100c857
record_format dspace
spelling oai:doaj.org-article:0db4ca40a6c24e709631cddad100c8572021-12-02T11:52:17ZSelf-assembled Cubic Boron Nitride Nanodots10.1038/s41598-017-04297-12045-2322https://doaj.org/article/0db4ca40a6c24e709631cddad100c8572017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04297-1https://doaj.org/toc/2045-2322Abstract One of the low-dimensional Boron Nitride (BN) forms, namely, cubic-BN (c-BN) nanodots (NDs), offers a variety of novel opportunities in battery, biology, deep ultraviolet light emitting diodes, sensors, filters, and other optoelectronic applications. To date, the attempts towards producing c-BN NDs were mainly performed under extreme high-temperature/high-pressure conditions and resulted in c-BN NDs with micrometer sizes, mixture of different BN phases, and containing process-related impurities/contaminants. To enhance device performance for those applications by taking advantage of size effect, pure, sub-100 nm c-BN NDs are necessary. In this paper, we report self-assembled growth of c-BN NDs on cobalt and nickel substrates by plasma-assisted molecular beam epitaxy. It is found that the nucleation, formation, and morphological properties of c-BN NDs can be closely correlated with the nature of substrate including catalysis effect, lattice-mismatch-induced strain, and roughness, and growth conditions, in particular, growth time and growth temperature. The mean lateral size of c-BN NDs on cobalt scales from 175 nm to 77 nm with the growth time. The growth mechanism of c-BN NDs on metal substrates is concluded to be Volmer-Weber (VW) mode. A simplified two-dimensional numerical modeling shows that the elastic strain energy plays a key role in determining the total formation energy of c-BN NDs on metals.Alireza KhanakiZhongguang XuHao TianRenjing ZhengZheng ZuoJian-Guo ZhengJianlin LiuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Alireza Khanaki
Zhongguang Xu
Hao Tian
Renjing Zheng
Zheng Zuo
Jian-Guo Zheng
Jianlin Liu
Self-assembled Cubic Boron Nitride Nanodots
description Abstract One of the low-dimensional Boron Nitride (BN) forms, namely, cubic-BN (c-BN) nanodots (NDs), offers a variety of novel opportunities in battery, biology, deep ultraviolet light emitting diodes, sensors, filters, and other optoelectronic applications. To date, the attempts towards producing c-BN NDs were mainly performed under extreme high-temperature/high-pressure conditions and resulted in c-BN NDs with micrometer sizes, mixture of different BN phases, and containing process-related impurities/contaminants. To enhance device performance for those applications by taking advantage of size effect, pure, sub-100 nm c-BN NDs are necessary. In this paper, we report self-assembled growth of c-BN NDs on cobalt and nickel substrates by plasma-assisted molecular beam epitaxy. It is found that the nucleation, formation, and morphological properties of c-BN NDs can be closely correlated with the nature of substrate including catalysis effect, lattice-mismatch-induced strain, and roughness, and growth conditions, in particular, growth time and growth temperature. The mean lateral size of c-BN NDs on cobalt scales from 175 nm to 77 nm with the growth time. The growth mechanism of c-BN NDs on metal substrates is concluded to be Volmer-Weber (VW) mode. A simplified two-dimensional numerical modeling shows that the elastic strain energy plays a key role in determining the total formation energy of c-BN NDs on metals.
format article
author Alireza Khanaki
Zhongguang Xu
Hao Tian
Renjing Zheng
Zheng Zuo
Jian-Guo Zheng
Jianlin Liu
author_facet Alireza Khanaki
Zhongguang Xu
Hao Tian
Renjing Zheng
Zheng Zuo
Jian-Guo Zheng
Jianlin Liu
author_sort Alireza Khanaki
title Self-assembled Cubic Boron Nitride Nanodots
title_short Self-assembled Cubic Boron Nitride Nanodots
title_full Self-assembled Cubic Boron Nitride Nanodots
title_fullStr Self-assembled Cubic Boron Nitride Nanodots
title_full_unstemmed Self-assembled Cubic Boron Nitride Nanodots
title_sort self-assembled cubic boron nitride nanodots
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/0db4ca40a6c24e709631cddad100c857
work_keys_str_mv AT alirezakhanaki selfassembledcubicboronnitridenanodots
AT zhongguangxu selfassembledcubicboronnitridenanodots
AT haotian selfassembledcubicboronnitridenanodots
AT renjingzheng selfassembledcubicboronnitridenanodots
AT zhengzuo selfassembledcubicboronnitridenanodots
AT jianguozheng selfassembledcubicboronnitridenanodots
AT jianlinliu selfassembledcubicboronnitridenanodots
_version_ 1718395086452031488