III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber
Abstract Integration of functional infrared photodetectors on silicon platforms has been gaining attention for diverse applications in the fields of imaging and sensing. Although III–V semiconductor is a promising candidate for infrared photodetectors on silicon, the difficulties in directly growing...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/0e1d1b0671da4d13a7aab685da85e895 |
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| Sumario: | Abstract Integration of functional infrared photodetectors on silicon platforms has been gaining attention for diverse applications in the fields of imaging and sensing. Although III–V semiconductor is a promising candidate for infrared photodetectors on silicon, the difficulties in directly growing high-quality III–V on silicon and realizing functionalities have been a challenge. Here, we propose a design of III–V nanowires on silicon (100) substrates, which are self-assembled with gold plasmonic nanostructures, as a key building block for efficient and functional photodetectors on silicon. Partially gold-coated III–V nanowire arrays form a plasmonic-photonic hybrid metasurface, wherein the localized and propagating plasmonic resonances enable high absorption in III–V nanowires. Unlike conventional photodetectors, numerical calculations reveal that the proposed meta-absorber exhibits high sensitivity to the polarization, incident angle, wavelength of input light, as well as the surrounding environment. These features represent that the proposed meta-absorber design can be utilized not only for efficient infrared photodetectors on silicon but for various sensing applications with high sensitivity and functionality. |
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