III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber

Abstract Integration of functional infrared photodetectors on silicon platforms has been gaining attention for diverse applications in the fields of imaging and sensing. Although III–V semiconductor is a promising candidate for infrared photodetectors on silicon, the difficulties in directly growing...

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Autores principales:	Hyunseok Kim, Haneui Bae, Ting-Yuan Chang, Diana L. Huffaker
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/0e1d1b0671da4d13a7aab685da85e895
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spelling	oai:doaj.org-article:0e1d1b0671da4d13a7aab685da85e8952021-12-02T16:14:55ZIII–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber10.1038/s41598-021-93398-z2045-2322https://doaj.org/article/0e1d1b0671da4d13a7aab685da85e8952021-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-93398-zhttps://doaj.org/toc/2045-2322Abstract Integration of functional infrared photodetectors on silicon platforms has been gaining attention for diverse applications in the fields of imaging and sensing. Although III–V semiconductor is a promising candidate for infrared photodetectors on silicon, the difficulties in directly growing high-quality III–V on silicon and realizing functionalities have been a challenge. Here, we propose a design of III–V nanowires on silicon (100) substrates, which are self-assembled with gold plasmonic nanostructures, as a key building block for efficient and functional photodetectors on silicon. Partially gold-coated III–V nanowire arrays form a plasmonic-photonic hybrid metasurface, wherein the localized and propagating plasmonic resonances enable high absorption in III–V nanowires. Unlike conventional photodetectors, numerical calculations reveal that the proposed meta-absorber exhibits high sensitivity to the polarization, incident angle, wavelength of input light, as well as the surrounding environment. These features represent that the proposed meta-absorber design can be utilized not only for efficient infrared photodetectors on silicon but for various sensing applications with high sensitivity and functionality.Hyunseok KimHaneui BaeTing-Yuan ChangDiana L. HuffakerNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Hyunseok Kim Haneui Bae Ting-Yuan Chang Diana L. Huffaker III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber
description	Abstract Integration of functional infrared photodetectors on silicon platforms has been gaining attention for diverse applications in the fields of imaging and sensing. Although III–V semiconductor is a promising candidate for infrared photodetectors on silicon, the difficulties in directly growing high-quality III–V on silicon and realizing functionalities have been a challenge. Here, we propose a design of III–V nanowires on silicon (100) substrates, which are self-assembled with gold plasmonic nanostructures, as a key building block for efficient and functional photodetectors on silicon. Partially gold-coated III–V nanowire arrays form a plasmonic-photonic hybrid metasurface, wherein the localized and propagating plasmonic resonances enable high absorption in III–V nanowires. Unlike conventional photodetectors, numerical calculations reveal that the proposed meta-absorber exhibits high sensitivity to the polarization, incident angle, wavelength of input light, as well as the surrounding environment. These features represent that the proposed meta-absorber design can be utilized not only for efficient infrared photodetectors on silicon but for various sensing applications with high sensitivity and functionality.
format	article
author	Hyunseok Kim Haneui Bae Ting-Yuan Chang Diana L. Huffaker
author_facet	Hyunseok Kim Haneui Bae Ting-Yuan Chang Diana L. Huffaker
author_sort	Hyunseok Kim
title	III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber
title_short	III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber
title_full	III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber
title_fullStr	III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber
title_full_unstemmed	III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber
title_sort	iii–v nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/0e1d1b0671da4d13a7aab685da85e895
work_keys_str_mv	AT hyunseokkim iiivnanowiresonsilicon100asplasmonicphotonichybridmetaabsorber AT haneuibae iiivnanowiresonsilicon100asplasmonicphotonichybridmetaabsorber AT tingyuanchang iiivnanowiresonsilicon100asplasmonicphotonichybridmetaabsorber AT dianalhuffaker iiivnanowiresonsilicon100asplasmonicphotonichybridmetaabsorber
_version_	1718384274745327616

III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber

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