Surface Topography of Si/TiO<sub>2</sub> Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation
This study investigates the surface topography of the deposited thin films versus the distance between target and substrate (<i>d<sub>TS</sub></i>) inside a laser ablation equipment. The profile of the rough surface was obtained by atomic force microscopy data analysis based...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/0e46cd79478a4414b9fa2f1cfcc779fb |
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| Sumario: | This study investigates the surface topography of the deposited thin films versus the distance between target and substrate (<i>d<sub>TS</sub></i>) inside a laser ablation equipment. The profile of the rough surface was obtained by atomic force microscopy data analysis based on power spectral density and the roughness-length scale (RLS) functions. The roughing on the top film is analyzed considering the previous topography of the underneath surface for each consecutive TiO<sub>2</sub> and Si deposition onto Si (100) wafer. The buried oxide layer inside of Si/TiO<sub>2</sub>/c-Si structure, obtained by KrF excimer laser ablation was characterized by complementary techniques as spectral ellipsometry, X-ray reflectometry, and X-ray diffraction. |
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