Surface Topography of Si/TiO2 Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation

This study investigates the surface topography of the deposited thin films versus the distance between target and substrate (dTS) inside a laser ablation equipment. The profile of the rough surface was obtained by atomic force microscopy data analysis based...

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Autores principales:	Călin Constantin Moise, Aida Pantazi, Geanina Valentina Mihai, Alin Jderu, Mircea Bercu, Angelo Alberto Messina, Marius Enăchescu
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	pulsed laser deposition thin films atomic force microscopy power spectral density surface topography Engineering (General). Civil engineering (General) TA1-2040
Acceso en línea:	https://doaj.org/article/0e46cd79478a4414b9fa2f1cfcc779fb
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id	oai:doaj.org-article:0e46cd79478a4414b9fa2f1cfcc779fb
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spelling	oai:doaj.org-article:0e46cd79478a4414b9fa2f1cfcc779fb2021-11-25T17:16:21ZSurface Topography of Si/TiO<sub>2</sub> Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation10.3390/coatings111113502079-6412https://doaj.org/article/0e46cd79478a4414b9fa2f1cfcc779fb2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-6412/11/11/1350https://doaj.org/toc/2079-6412This study investigates the surface topography of the deposited thin films versus the distance between target and substrate (<i>d<sub>TS</sub></i>) inside a laser ablation equipment. The profile of the rough surface was obtained by atomic force microscopy data analysis based on power spectral density and the roughness-length scale (RLS) functions. The roughing on the top film is analyzed considering the previous topography of the underneath surface for each consecutive TiO<sub>2</sub> and Si deposition onto Si (100) wafer. The buried oxide layer inside of Si/TiO<sub>2</sub>/c-Si structure, obtained by KrF excimer laser ablation was characterized by complementary techniques as spectral ellipsometry, X-ray reflectometry, and X-ray diffraction.Călin Constantin MoiseAida PantaziGeanina Valentina MihaiAlin JderuMircea BercuAngelo Alberto MessinaMarius EnăchescuMDPI AGarticlepulsed laser depositionthin filmsatomic force microscopypower spectral densitysurface topographyEngineering (General). Civil engineering (General)TA1-2040ENCoatings, Vol 11, Iss 1350, p 1350 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	pulsed laser deposition thin films atomic force microscopy power spectral density surface topography Engineering (General). Civil engineering (General) TA1-2040
spellingShingle	pulsed laser deposition thin films atomic force microscopy power spectral density surface topography Engineering (General). Civil engineering (General) TA1-2040 Călin Constantin Moise Aida Pantazi Geanina Valentina Mihai Alin Jderu Mircea Bercu Angelo Alberto Messina Marius Enăchescu Surface Topography of Si/TiO<sub>2</sub> Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation
description	This study investigates the surface topography of the deposited thin films versus the distance between target and substrate (<i>d<sub>TS</sub></i>) inside a laser ablation equipment. The profile of the rough surface was obtained by atomic force microscopy data analysis based on power spectral density and the roughness-length scale (RLS) functions. The roughing on the top film is analyzed considering the previous topography of the underneath surface for each consecutive TiO<sub>2</sub> and Si deposition onto Si (100) wafer. The buried oxide layer inside of Si/TiO<sub>2</sub>/c-Si structure, obtained by KrF excimer laser ablation was characterized by complementary techniques as spectral ellipsometry, X-ray reflectometry, and X-ray diffraction.
format	article
author	Călin Constantin Moise Aida Pantazi Geanina Valentina Mihai Alin Jderu Mircea Bercu Angelo Alberto Messina Marius Enăchescu
author_facet	Călin Constantin Moise Aida Pantazi Geanina Valentina Mihai Alin Jderu Mircea Bercu Angelo Alberto Messina Marius Enăchescu
author_sort	Călin Constantin Moise
title	Surface Topography of Si/TiO<sub>2</sub> Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation
title_short	Surface Topography of Si/TiO<sub>2</sub> Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation
title_full	Surface Topography of Si/TiO<sub>2</sub> Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation
title_fullStr	Surface Topography of Si/TiO<sub>2</sub> Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation
title_full_unstemmed	Surface Topography of Si/TiO<sub>2</sub> Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation
title_sort	surface topography of si/tio<sub>2</sub> stacked layers on silicon substrate deposited by krf excimer laser ablation
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/0e46cd79478a4414b9fa2f1cfcc779fb
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Surface Topography of Si/TiO<sub>2</sub> Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation

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