Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation
Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d ≈ 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/0e4e69015f4140c599a629a1e508784f |
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| Sumario: | Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d ≈ 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (ω ≈ 0.140 THz) and sources in the IR region (ω ≈ 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6–2.7) ns. The studied response of VN structures to IR (ω ≈ 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S ~ ) within the frequency range ω ≈ (0.3–6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (δE) reached NEP @1MHz ≈ 6.3 × 10–14 W/√Hz and δE ≈ 8.1 × 10–18 J, respectively. |
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