Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation

Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d ≈ 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions...

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Autores principales:	Ivan Pentin, Yury Vakhtomin, Vitaly Seleznev, Konstantin Smirnov
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/0e4e69015f4140c599a629a1e508784f
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spelling	oai:doaj.org-article:0e4e69015f4140c599a629a1e508784f2021-12-02T18:37:06ZHot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation10.1038/s41598-020-73850-22045-2322https://doaj.org/article/0e4e69015f4140c599a629a1e508784f2020-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-73850-2https://doaj.org/toc/2045-2322Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d ≈ 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (ω ≈ 0.140 THz) and sources in the IR region (ω ≈ 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6–2.7) ns. The studied response of VN structures to IR (ω ≈ 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S ~ ) within the frequency range ω ≈ (0.3–6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (δE) reached NEP @1MHz ≈ 6.3 × 10–14 W/√Hz and δE ≈ 8.1 × 10–18 J, respectively.Ivan PentinYury VakhtominVitaly SeleznevKonstantin SmirnovNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Ivan Pentin Yury Vakhtomin Vitaly Seleznev Konstantin Smirnov Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation
description	Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d ≈ 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (ω ≈ 0.140 THz) and sources in the IR region (ω ≈ 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6–2.7) ns. The studied response of VN structures to IR (ω ≈ 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S ~ ) within the frequency range ω ≈ (0.3–6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (δE) reached NEP @1MHz ≈ 6.3 × 10–14 W/√Hz and δE ≈ 8.1 × 10–18 J, respectively.
format	article
author	Ivan Pentin Yury Vakhtomin Vitaly Seleznev Konstantin Smirnov
author_facet	Ivan Pentin Yury Vakhtomin Vitaly Seleznev Konstantin Smirnov
author_sort	Ivan Pentin
title	Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation
title_short	Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation
title_full	Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation
title_fullStr	Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation
title_full_unstemmed	Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation
title_sort	hot electron energy relaxation time in vanadium nitride superconducting film structures under thz and ir radiation
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/0e4e69015f4140c599a629a1e508784f
work_keys_str_mv	AT ivanpentin hotelectronenergyrelaxationtimeinvanadiumnitridesuperconductingfilmstructuresunderthzandirradiation AT yuryvakhtomin hotelectronenergyrelaxationtimeinvanadiumnitridesuperconductingfilmstructuresunderthzandirradiation AT vitalyseleznev hotelectronenergyrelaxationtimeinvanadiumnitridesuperconductingfilmstructuresunderthzandirradiation AT konstantinsmirnov hotelectronenergyrelaxationtimeinvanadiumnitridesuperconductingfilmstructuresunderthzandirradiation
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Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation

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