Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures for multi-level magnetic pillar memory

We propose a new pillar type of multi-level memory with TbxCo100−x/Cu/[Co/Pt]2 heterostructures to achieve high storage density and controllable domain wall position in-memory applications. The structure consists of amorphous ferrimagnetic Tb–Co alloy films and ferromagnetic Co/Pt multilayers separa...

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Autores principales:	Sina Ranjbar, Satoshi Sumi, Kenji Tanabe, Hiroyuki Awano
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/0e939b584e784e37a503b1d4e124afdd
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spelling	oai:doaj.org-article:0e939b584e784e37a503b1d4e124afdd2021-12-01T18:52:06ZUltra-thin interfacial domain wall less than 1 nm based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures for multi-level magnetic pillar memory2158-322610.1063/5.0064346https://doaj.org/article/0e939b584e784e37a503b1d4e124afdd2021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0064346https://doaj.org/toc/2158-3226We propose a new pillar type of multi-level memory with TbxCo100−x/Cu/[Co/Pt]2 heterostructures to achieve high storage density and controllable domain wall position in-memory applications. The structure consists of amorphous ferrimagnetic Tb–Co alloy films and ferromagnetic Co/Pt multilayers separated by less than one monolayer of Cu. Here, we observe that the interfacial domain wall energy density can be controlled by changing the interlayer thickness of Cu and Tb–Co composition. We also observe two competing mechanisms, one leading to an increase and the other to a decrease, corresponding to the effect of Tb content on saturation magnetization and coercivity of heterostructures. Theoretical and experimental results show that by tuning the Tb–Co composition, we were able to decrease domain wall (DW) width and precisely control the DW position of the multilayer structure. The interfacial domain wall width is significantly decreased to less than 1 nm compared to other reports. Moreover, controlling the DW position and width offers a novel multi-level magnetic memory with high performance compared to conventional memory applications.Sina RanjbarSatoshi SumiKenji TanabeHiroyuki AwanoAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115017-115017-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Sina Ranjbar Satoshi Sumi Kenji Tanabe Hiroyuki Awano Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures for multi-level magnetic pillar memory
description	We propose a new pillar type of multi-level memory with TbxCo100−x/Cu/[Co/Pt]2 heterostructures to achieve high storage density and controllable domain wall position in-memory applications. The structure consists of amorphous ferrimagnetic Tb–Co alloy films and ferromagnetic Co/Pt multilayers separated by less than one monolayer of Cu. Here, we observe that the interfacial domain wall energy density can be controlled by changing the interlayer thickness of Cu and Tb–Co composition. We also observe two competing mechanisms, one leading to an increase and the other to a decrease, corresponding to the effect of Tb content on saturation magnetization and coercivity of heterostructures. Theoretical and experimental results show that by tuning the Tb–Co composition, we were able to decrease domain wall (DW) width and precisely control the DW position of the multilayer structure. The interfacial domain wall width is significantly decreased to less than 1 nm compared to other reports. Moreover, controlling the DW position and width offers a novel multi-level magnetic memory with high performance compared to conventional memory applications.
format	article
author	Sina Ranjbar Satoshi Sumi Kenji Tanabe Hiroyuki Awano
author_facet	Sina Ranjbar Satoshi Sumi Kenji Tanabe Hiroyuki Awano
author_sort	Sina Ranjbar
title	Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures for multi-level magnetic pillar memory
title_short	Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures for multi-level magnetic pillar memory
title_full	Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures for multi-level magnetic pillar memory
title_fullStr	Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures for multi-level magnetic pillar memory
title_full_unstemmed	Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures for multi-level magnetic pillar memory
title_sort	ultra-thin interfacial domain wall less than 1 nm based on tbxco100−x/cu/[co/pt]2 heterostructures for multi-level magnetic pillar memory
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/0e939b584e784e37a503b1d4e124afdd
work_keys_str_mv	AT sinaranjbar ultrathininterfacialdomainwalllessthan1nmbasedontbxco100xcucopt2heterostructuresformultilevelmagneticpillarmemory AT satoshisumi ultrathininterfacialdomainwalllessthan1nmbasedontbxco100xcucopt2heterostructuresformultilevelmagneticpillarmemory AT kenjitanabe ultrathininterfacialdomainwalllessthan1nmbasedontbxco100xcucopt2heterostructuresformultilevelmagneticpillarmemory AT hiroyukiawano ultrathininterfacialdomainwalllessthan1nmbasedontbxco100xcucopt2heterostructuresformultilevelmagneticpillarmemory
_version_	1718404674615246848

Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures for multi-level magnetic pillar memory

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