Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures for multi-level magnetic pillar memory
We propose a new pillar type of multi-level memory with TbxCo100−x/Cu/[Co/Pt]2 heterostructures to achieve high storage density and controllable domain wall position in-memory applications. The structure consists of amorphous ferrimagnetic Tb–Co alloy films and ferromagnetic Co/Pt multilayers separa...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/0e939b584e784e37a503b1d4e124afdd |
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