Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate

We use a plasma-activated direct bonding process at room temperature to form heterostructures between GaAs and traditional Si substrates. The intermediate layer is not required at the bonding interface. The surface activation process is mainly carried out through inductively coupled Ar plasma for 60...

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Autores principales:	Rui Huang, Tian Lan, Chong Li, Zhiyong Wang
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	Direct bonding process Surface activation Defect states Electrical properties Physics QC1-999
Acceso en línea:	https://doaj.org/article/0ff6b63d391a437f9c3d2510c7071667
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spelling	oai:doaj.org-article:0ff6b63d391a437f9c3d2510c70716672021-12-02T05:01:19ZPlasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate2211-379710.1016/j.rinp.2021.105070https://doaj.org/article/0ff6b63d391a437f9c3d2510c70716672021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2211379721010548https://doaj.org/toc/2211-3797We use a plasma-activated direct bonding process at room temperature to form heterostructures between GaAs and traditional Si substrates. The intermediate layer is not required at the bonding interface. The surface activation process is mainly carried out through inductively coupled Ar plasma for 60 s with surface bombardment. After activation, the oxide activity on the substrate surfaces is enhanced and the generation of defect states is inhibited. By using this process, a void-free and robust bonding GaAs/Si heterointerface can be realized. Additionally, the structure and element composition of the bonding interface are observed to understand the bonding mechanisms. It is confirmed that As, Ga, and Si elements diffuse each other at the interface. Finally, the electrical properties of GaAs/Si heterostructure are measured. This bonding method can be used in electronic, optical, mechanical and other fields to integrate single-crystalline GaAs onto Si platform.Rui HuangTian LanChong LiZhiyong WangElsevierarticleDirect bonding processSurface activationDefect statesElectrical propertiesPhysicsQC1-999ENResults in Physics, Vol 31, Iss , Pp 105070- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Direct bonding process Surface activation Defect states Electrical properties Physics QC1-999
spellingShingle	Direct bonding process Surface activation Defect states Electrical properties Physics QC1-999 Rui Huang Tian Lan Chong Li Zhiyong Wang Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate
description	We use a plasma-activated direct bonding process at room temperature to form heterostructures between GaAs and traditional Si substrates. The intermediate layer is not required at the bonding interface. The surface activation process is mainly carried out through inductively coupled Ar plasma for 60 s with surface bombardment. After activation, the oxide activity on the substrate surfaces is enhanced and the generation of defect states is inhibited. By using this process, a void-free and robust bonding GaAs/Si heterointerface can be realized. Additionally, the structure and element composition of the bonding interface are observed to understand the bonding mechanisms. It is confirmed that As, Ga, and Si elements diffuse each other at the interface. Finally, the electrical properties of GaAs/Si heterostructure are measured. This bonding method can be used in electronic, optical, mechanical and other fields to integrate single-crystalline GaAs onto Si platform.
format	article
author	Rui Huang Tian Lan Chong Li Zhiyong Wang
author_facet	Rui Huang Tian Lan Chong Li Zhiyong Wang
author_sort	Rui Huang
title	Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate
title_short	Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate
title_full	Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate
title_fullStr	Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate
title_full_unstemmed	Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate
title_sort	plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline gaas and si substrate
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/0ff6b63d391a437f9c3d2510c7071667
work_keys_str_mv	AT ruihuang plasmaactivateddirectbondingatroomtemperaturetoachievetheintegrationofsinglecrystallinegaasandsisubstrate AT tianlan plasmaactivateddirectbondingatroomtemperaturetoachievetheintegrationofsinglecrystallinegaasandsisubstrate AT chongli plasmaactivateddirectbondingatroomtemperaturetoachievetheintegrationofsinglecrystallinegaasandsisubstrate AT zhiyongwang plasmaactivateddirectbondingatroomtemperaturetoachievetheintegrationofsinglecrystallinegaasandsisubstrate
_version_	1718400812913262592

Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate

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