Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate
We use a plasma-activated direct bonding process at room temperature to form heterostructures between GaAs and traditional Si substrates. The intermediate layer is not required at the bonding interface. The surface activation process is mainly carried out through inductively coupled Ar plasma for 60...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Elsevier
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/0ff6b63d391a437f9c3d2510c7071667 |
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