Growth of 100 mm indium antimonide single crystals by modified Czochralski technique

Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches. So far up to 75 mm indium antimonide single crystal...

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Autores principales:	Roman Yu. Kozlov, Svetlana S. Kormilitsina, Elena V. Molodtsova, Eugene O. Zhuravlev
Formato:	article
Lenguaje:	EN
Publicado:	Pensoft Publishers 2021
Materias:	Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/101f3ebc0ecb45bc8621c949723eb041
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id	oai:doaj.org-article:101f3ebc0ecb45bc8621c949723eb041
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spelling	oai:doaj.org-article:101f3ebc0ecb45bc8621c949723eb0412021-11-24T04:30:46ZGrowth of 100 mm indium antimonide single crystals by modified Czochralski technique10.3897/j.moem.7.2.762862452-1779https://doaj.org/article/101f3ebc0ecb45bc8621c949723eb0412021-06-01T00:00:00Zhttps://moem.pensoft.net/article/76286/download/pdf/https://moem.pensoft.net/article/76286/download/xml/https://moem.pensoft.net/article/76286/https://doaj.org/toc/2452-1779Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches. So far up to 75 mm indium antimonide single crystals have been grown in Russia. Indium antimonide is the element base for the widest field of solid state electronics, i.e., optoelectronics. Indium antimonide is used for the fabrication of 3–5 mm range linear photodetectors and photodetector arrays used as light-sensitive material in heat vision systems. Growth heat conditions have been selected and 100 mm [100] indium antimonide single crystals have been grown using the modified two-stage Czochralski technique. The graphite heating unit has been oversized to accommodate a 150 mm crucible and a 4.5–5 kg load. The results of the work have provided for a substantial increase in the yield of photodetectors. The electrophysical properties of the as-grown single crystals have been studied using the Van der Pau method and proved to be in agreement with the standard parameters of undoped indium antimonide. Using the 9-field etch method of pit counting under an optical microscope the dislocation density in the 100 mm single crystals has been measured to be ≤ 100 cm-2which is similar to that for 50 mm single crystals.Roman Yu. KozlovSvetlana S. KormilitsinaElena V. MolodtsovaEugene O. ZhuravlevPensoft PublishersarticleElectronicsTK7800-8360ENModern Electronic Materials, Vol 7, Iss 2, Pp 73-78 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electronics TK7800-8360
spellingShingle	Electronics TK7800-8360 Roman Yu. Kozlov Svetlana S. Kormilitsina Elena V. Molodtsova Eugene O. Zhuravlev Growth of 100 mm indium antimonide single crystals by modified Czochralski technique
description	Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches. So far up to 75 mm indium antimonide single crystals have been grown in Russia. Indium antimonide is the element base for the widest field of solid state electronics, i.e., optoelectronics. Indium antimonide is used for the fabrication of 3–5 mm range linear photodetectors and photodetector arrays used as light-sensitive material in heat vision systems. Growth heat conditions have been selected and 100 mm [100] indium antimonide single crystals have been grown using the modified two-stage Czochralski technique. The graphite heating unit has been oversized to accommodate a 150 mm crucible and a 4.5–5 kg load. The results of the work have provided for a substantial increase in the yield of photodetectors. The electrophysical properties of the as-grown single crystals have been studied using the Van der Pau method and proved to be in agreement with the standard parameters of undoped indium antimonide. Using the 9-field etch method of pit counting under an optical microscope the dislocation density in the 100 mm single crystals has been measured to be ≤ 100 cm-2which is similar to that for 50 mm single crystals.
format	article
author	Roman Yu. Kozlov Svetlana S. Kormilitsina Elena V. Molodtsova Eugene O. Zhuravlev
author_facet	Roman Yu. Kozlov Svetlana S. Kormilitsina Elena V. Molodtsova Eugene O. Zhuravlev
author_sort	Roman Yu. Kozlov
title	Growth of 100 mm indium antimonide single crystals by modified Czochralski technique
title_short	Growth of 100 mm indium antimonide single crystals by modified Czochralski technique
title_full	Growth of 100 mm indium antimonide single crystals by modified Czochralski technique
title_fullStr	Growth of 100 mm indium antimonide single crystals by modified Czochralski technique
title_full_unstemmed	Growth of 100 mm indium antimonide single crystals by modified Czochralski technique
title_sort	growth of 100 mm indium antimonide single crystals by modified czochralski technique
publisher	Pensoft Publishers
publishDate	2021
url	https://doaj.org/article/101f3ebc0ecb45bc8621c949723eb041
work_keys_str_mv	AT romanyukozlov growthof100mmindiumantimonidesinglecrystalsbymodifiedczochralskitechnique AT svetlanaskormilitsina growthof100mmindiumantimonidesinglecrystalsbymodifiedczochralskitechnique AT elenavmolodtsova growthof100mmindiumantimonidesinglecrystalsbymodifiedczochralskitechnique AT eugeneozhuravlev growthof100mmindiumantimonidesinglecrystalsbymodifiedczochralskitechnique
_version_	1718415959462510592

Growth of 100 mm indium antimonide single crystals by modified Czochralski technique

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