New optical materials of Ge-As-S AND As-S-Se glassy systems
Nowadays chalcogenide glasses are well known as multifunctional materials with specific electrical and optical properties, for their potential applications in microelectronics and optoelectronics as ovonic devices, passive and active optical elements, components of the photon...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2011
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/105cfbb516d045fdbb0dfea728d88c64 |
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| Sumario: | Nowadays chalcogenide glasses are well known as multifunctional materials with specific
electrical and optical properties, for their potential applications in microelectronics and
optoelectronics as ovonic devices, passive and active optical elements, components of the
photonic structures and recording media of high density. Chalcogenide glasses (As-Se, As-S-Se,
As-Sb-S, Ge-As-Se) are characterized by the wide region of glass formation, high glass transition
temperatures (Tg=300400
0C) and thermal stability. These glasses are of considerable interest
also due to high values of refractive index (n=2.42.65), high nonlinearities (n2=2.510-17
cm2
/W)
for g-As15Ge35Se50, and optical transmission at 1.55 m, that makes them suitable for photonic
applications. Chalcogenide glasses are sensitive to the external illumination and exhibit reversible
and irreversible photoinduced effects. These effects are used for the fabrication of different
registration media, diffractive structures, waveguides, photonic structures, and optical amplifiers.
Arsenic chalcogenide films usually become darkened under light irradiation in the region of the
fundamental absorption edge. The changes in the optical constants (absorption coefficient
, optical band gap Eg, and refractive index n) of the investigated materials under ionization
irradiation and heat treatment were evaluated.
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