New optical materials of Ge-As-S AND As-S-Se glassy systems

Nowadays chalcogenide glasses are well known as multifunctional materials with specific electrical and optical properties, for their potential applications in microelectronics and optoelectronics as ovonic devices, passive and active optical elements, components of the photon...

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Autores principales:	Iovu, Mihail, Colomeico, Eduard, Benea, Vasile, Cojocaru, Ion
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2011
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/105cfbb516d045fdbb0dfea728d88c64
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spelling	oai:doaj.org-article:105cfbb516d045fdbb0dfea728d88c642021-11-21T12:02:24ZNew optical materials of Ge-As-S AND As-S-Se glassy systems2537-63651810-648Xhttps://doaj.org/article/105cfbb516d045fdbb0dfea728d88c642011-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2011/article/4364https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Nowadays chalcogenide glasses are well known as multifunctional materials with specific electrical and optical properties, for their potential applications in microelectronics and optoelectronics as ovonic devices, passive and active optical elements, components of the photonic structures and recording media of high density. Chalcogenide glasses (As-Se, As-S-Se, As-Sb-S, Ge-As-Se) are characterized by the wide region of glass formation, high glass transition temperatures (Tg=300400 0C) and thermal stability. These glasses are of considerable interest also due to high values of refractive index (n=2.42.65), high nonlinearities (n2=2.510-17 cm2 /W) for g-As15Ge35Se50, and optical transmission at 1.55 m, that makes them suitable for photonic applications. Chalcogenide glasses are sensitive to the external illumination and exhibit reversible and irreversible photoinduced effects. These effects are used for the fabrication of different registration media, diffractive structures, waveguides, photonic structures, and optical amplifiers. Arsenic chalcogenide films usually become darkened under light irradiation in the region of the fundamental absorption edge. The changes in the optical constants (absorption coefficient , optical band gap Eg, and refractive index n) of the investigated materials under ionization irradiation and heat treatment were evaluated. Iovu, MihailColomeico, EduardBenea, VasileCojocaru, IonD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 10, Iss 2, Pp 174-181 (2011)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Iovu, Mihail Colomeico, Eduard Benea, Vasile Cojocaru, Ion New optical materials of Ge-As-S AND As-S-Se glassy systems
description	Nowadays chalcogenide glasses are well known as multifunctional materials with specific electrical and optical properties, for their potential applications in microelectronics and optoelectronics as ovonic devices, passive and active optical elements, components of the photonic structures and recording media of high density. Chalcogenide glasses (As-Se, As-S-Se, As-Sb-S, Ge-As-Se) are characterized by the wide region of glass formation, high glass transition temperatures (Tg=300400 0C) and thermal stability. These glasses are of considerable interest also due to high values of refractive index (n=2.42.65), high nonlinearities (n2=2.510-17 cm2 /W) for g-As15Ge35Se50, and optical transmission at 1.55 m, that makes them suitable for photonic applications. Chalcogenide glasses are sensitive to the external illumination and exhibit reversible and irreversible photoinduced effects. These effects are used for the fabrication of different registration media, diffractive structures, waveguides, photonic structures, and optical amplifiers. Arsenic chalcogenide films usually become darkened under light irradiation in the region of the fundamental absorption edge. The changes in the optical constants (absorption coefficient , optical band gap Eg, and refractive index n) of the investigated materials under ionization irradiation and heat treatment were evaluated.
format	article
author	Iovu, Mihail Colomeico, Eduard Benea, Vasile Cojocaru, Ion
author_facet	Iovu, Mihail Colomeico, Eduard Benea, Vasile Cojocaru, Ion
author_sort	Iovu, Mihail
title	New optical materials of Ge-As-S AND As-S-Se glassy systems
title_short	New optical materials of Ge-As-S AND As-S-Se glassy systems
title_full	New optical materials of Ge-As-S AND As-S-Se glassy systems
title_fullStr	New optical materials of Ge-As-S AND As-S-Se glassy systems
title_full_unstemmed	New optical materials of Ge-As-S AND As-S-Se glassy systems
title_sort	new optical materials of ge-as-s and as-s-se glassy systems
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2011
url	https://doaj.org/article/105cfbb516d045fdbb0dfea728d88c64
work_keys_str_mv	AT iovumihail newopticalmaterialsofgeassandassseglassysystems AT colomeicoeduard newopticalmaterialsofgeassandassseglassysystems AT beneavasile newopticalmaterialsofgeassandassseglassysystems AT cojocaruion newopticalmaterialsofgeassandassseglassysystems
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New optical materials of Ge-As-S AND As-S-Se glassy systems

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