Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions
A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 10<sup>11</sup> cm<sup>−2</sup> ÷ 4.87 × 10<sup>13</sup> cm<sup>−2</sup>) and Bi (...
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oai:doaj.org-article:1088c9dcecff4fdbab4738b9dcafdaae2021-11-25T17:18:08ZRaman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions10.3390/cryst111113132073-4352https://doaj.org/article/1088c9dcecff4fdbab4738b9dcafdaae2021-10-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1313https://doaj.org/toc/2073-4352A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 10<sup>11</sup> cm<sup>−2</sup> ÷ 4.87 × 10<sup>13</sup> cm<sup>−2</sup>) and Bi (710 MeV, 1 × 10<sup>11</sup> cm<sup>−2</sup> ÷ 1 × 10<sup>13</sup> cm<sup>−2</sup>) ions. It was shown that both the compressive and tensile stress fields were formed in the irradiated specimen, separated by a buffer zone that was located at a depth that coincided with the thickness of layer, amorphized due to multiple overlapping track regions. The compressive stresses were registered in a subsurface region, while at a greater depth, the tensile stresses were recorded and their levels reached the maximum value at the end of ion range. The size of the amorphous layer was evaluated from the dose dependence of the full width at half maximum (FWHM) (FWHM of the dominant 204 cm<sup>−1</sup> line in the Raman spectra and scanning electron microscopy.Ainash ZhumazhanovaAlisher MutaliAnel IbrayevaVladimir SkuratovAlma DauletbekovaEkaterina KorneevaAbdirash AkilbekovMaxim ZdorovetsMDPI AGarticlesilicon nitrideswift heavy ionsRaman spectramechanical stressespiezospectroscopyCrystallographyQD901-999ENCrystals, Vol 11, Iss 1313, p 1313 (2021) |
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silicon nitride swift heavy ions Raman spectra mechanical stresses piezospectroscopy Crystallography QD901-999 |
| spellingShingle |
silicon nitride swift heavy ions Raman spectra mechanical stresses piezospectroscopy Crystallography QD901-999 Ainash Zhumazhanova Alisher Mutali Anel Ibrayeva Vladimir Skuratov Alma Dauletbekova Ekaterina Korneeva Abdirash Akilbekov Maxim Zdorovets Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions |
| description |
A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 10<sup>11</sup> cm<sup>−2</sup> ÷ 4.87 × 10<sup>13</sup> cm<sup>−2</sup>) and Bi (710 MeV, 1 × 10<sup>11</sup> cm<sup>−2</sup> ÷ 1 × 10<sup>13</sup> cm<sup>−2</sup>) ions. It was shown that both the compressive and tensile stress fields were formed in the irradiated specimen, separated by a buffer zone that was located at a depth that coincided with the thickness of layer, amorphized due to multiple overlapping track regions. The compressive stresses were registered in a subsurface region, while at a greater depth, the tensile stresses were recorded and their levels reached the maximum value at the end of ion range. The size of the amorphous layer was evaluated from the dose dependence of the full width at half maximum (FWHM) (FWHM of the dominant 204 cm<sup>−1</sup> line in the Raman spectra and scanning electron microscopy. |
| format |
article |
| author |
Ainash Zhumazhanova Alisher Mutali Anel Ibrayeva Vladimir Skuratov Alma Dauletbekova Ekaterina Korneeva Abdirash Akilbekov Maxim Zdorovets |
| author_facet |
Ainash Zhumazhanova Alisher Mutali Anel Ibrayeva Vladimir Skuratov Alma Dauletbekova Ekaterina Korneeva Abdirash Akilbekov Maxim Zdorovets |
| author_sort |
Ainash Zhumazhanova |
| title |
Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions |
| title_short |
Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions |
| title_full |
Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions |
| title_fullStr |
Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions |
| title_full_unstemmed |
Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions |
| title_sort |
raman study of polycrystalline si<sub>3</sub>n<sub>4</sub> irradiated with swift heavy ions |
| publisher |
MDPI AG |
| publishDate |
2021 |
| url |
https://doaj.org/article/1088c9dcecff4fdbab4738b9dcafdaae |
| work_keys_str_mv |
AT ainashzhumazhanova ramanstudyofpolycrystallinesisub3subnsub4subirradiatedwithswiftheavyions AT alishermutali ramanstudyofpolycrystallinesisub3subnsub4subirradiatedwithswiftheavyions AT anelibrayeva ramanstudyofpolycrystallinesisub3subnsub4subirradiatedwithswiftheavyions AT vladimirskuratov ramanstudyofpolycrystallinesisub3subnsub4subirradiatedwithswiftheavyions AT almadauletbekova ramanstudyofpolycrystallinesisub3subnsub4subirradiatedwithswiftheavyions AT ekaterinakorneeva ramanstudyofpolycrystallinesisub3subnsub4subirradiatedwithswiftheavyions AT abdirashakilbekov ramanstudyofpolycrystallinesisub3subnsub4subirradiatedwithswiftheavyions AT maximzdorovets ramanstudyofpolycrystallinesisub3subnsub4subirradiatedwithswiftheavyions |
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