Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions

Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions

A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 10<sup>11</sup> cm<sup>−2</sup> ÷ 4.87 × 10<sup>13</sup> cm<sup>−2</sup>) and Bi (...

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Detalles Bibliográficos
Autores principales: Ainash Zhumazhanova, Alisher Mutali, Anel Ibrayeva, Vladimir Skuratov, Alma Dauletbekova, Ekaterina Korneeva, Abdirash Akilbekov, Maxim Zdorovets
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
silicon nitride
swift heavy ions
Raman spectra
mechanical stresses
piezospectroscopy
Crystallography
QD901-999
Acceso en línea:https://doaj.org/article/1088c9dcecff4fdbab4738b9dcafdaae
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https://doaj.org/article/1088c9dcecff4fdbab4738b9dcafdaae

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