Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions

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Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions

A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 10<sup>11</sup> cm<sup>−2</sup> ÷ 4.87 × 10<sup>13</sup> cm<sup>−2</sup>) and Bi (...

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Autores principales:	Ainash Zhumazhanova, Alisher Mutali, Anel Ibrayeva, Vladimir Skuratov, Alma Dauletbekova, Ekaterina Korneeva, Abdirash Akilbekov, Maxim Zdorovets
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	silicon nitride swift heavy ions Raman spectra mechanical stresses piezospectroscopy Crystallography QD901-999
Acceso en línea:	https://doaj.org/article/1088c9dcecff4fdbab4738b9dcafdaae
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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