Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions
A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 10<sup>11</sup> cm<sup>−2</sup> ÷ 4.87 × 10<sup>13</sup> cm<sup>−2</sup>) and Bi (...
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| Main Authors: | , , , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
MDPI AG
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/1088c9dcecff4fdbab4738b9dcafdaae |
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