Interplay of orbital effects and nanoscale strain in topological crystalline insulators

The role of orbital degrees of freedom in determining the electronic structure remains obscured. Here, Walkup et al. report strain-induced band structure changes in a topological crystalline insulator SnTe, whose surprising behavior reflects the  orbital nature of bands.

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Auteurs principaux: Daniel Walkup, Badih A. Assaf, Kane L. Scipioni, R. Sankar, Fangcheng Chou, Guoqing Chang, Hsin Lin, Ilija Zeljkovic, Vidya Madhavan
Format: article
Langue:EN
Publié: Nature Portfolio 2018
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Accès en ligne:https://doaj.org/article/110895d7faa34530b31f0f0613a5ecc3
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Résumé:The role of orbital degrees of freedom in determining the electronic structure remains obscured. Here, Walkup et al. report strain-induced band structure changes in a topological crystalline insulator SnTe, whose surprising behavior reflects the  orbital nature of bands.