Interplay of orbital effects and nanoscale strain in topological crystalline insulators
The role of orbital degrees of freedom in determining the electronic structure remains obscured. Here, Walkup et al. report strain-induced band structure changes in a topological crystalline insulator SnTe, whose surprising behavior reflects the orbital nature of bands.
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Autores principales: | Daniel Walkup, Badih A. Assaf, Kane L. Scipioni, R. Sankar, Fangcheng Chou, Guoqing Chang, Hsin Lin, Ilija Zeljkovic, Vidya Madhavan |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2018
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Materias: | |
Acceso en línea: | https://doaj.org/article/110895d7faa34530b31f0f0613a5ecc3 |
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