Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3

Layered van der Waals compounds offer opportunities to visit new physical phenomena in two dimensional materials. Here the authors report large tunneling magnetoresistance through exfoliated CrI3 crystals and attribute its evolution to the multiple transitions to different magnetic states.

Guardado en:

Detalles Bibliográficos
Autores principales:	Zhe Wang, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Martin Kroner, Marco Gibertini, Takashi Taniguchi, Kenji Watanabe, Ataç Imamoğlu, Enrico Giannini, Alberto F. Morpurgo
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/11526c5d779a414c9baf794ee9b8279b
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:11526c5d779a414c9baf794ee9b8279b
record_format	dspace
spelling	oai:doaj.org-article:11526c5d779a414c9baf794ee9b8279b2021-12-02T15:34:29ZVery large tunneling magnetoresistance in layered magnetic semiconductor CrI310.1038/s41467-018-04953-82041-1723https://doaj.org/article/11526c5d779a414c9baf794ee9b8279b2018-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-04953-8https://doaj.org/toc/2041-1723Layered van der Waals compounds offer opportunities to visit new physical phenomena in two dimensional materials. Here the authors report large tunneling magnetoresistance through exfoliated CrI3 crystals and attribute its evolution to the multiple transitions to different magnetic states.Zhe WangIgnacio Gutiérrez-LezamaNicolas UbrigMartin KronerMarco GibertiniTakashi TaniguchiKenji WatanabeAtaç ImamoğluEnrico GianniniAlberto F. MorpurgoNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Zhe Wang Ignacio Gutiérrez-Lezama Nicolas Ubrig Martin Kroner Marco Gibertini Takashi Taniguchi Kenji Watanabe Ataç Imamoğlu Enrico Giannini Alberto F. Morpurgo Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
description	Layered van der Waals compounds offer opportunities to visit new physical phenomena in two dimensional materials. Here the authors report large tunneling magnetoresistance through exfoliated CrI3 crystals and attribute its evolution to the multiple transitions to different magnetic states.
format	article
author	Zhe Wang Ignacio Gutiérrez-Lezama Nicolas Ubrig Martin Kroner Marco Gibertini Takashi Taniguchi Kenji Watanabe Ataç Imamoğlu Enrico Giannini Alberto F. Morpurgo
author_facet	Zhe Wang Ignacio Gutiérrez-Lezama Nicolas Ubrig Martin Kroner Marco Gibertini Takashi Taniguchi Kenji Watanabe Ataç Imamoğlu Enrico Giannini Alberto F. Morpurgo
author_sort	Zhe Wang
title	Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
title_short	Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
title_full	Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
title_fullStr	Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
title_full_unstemmed	Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
title_sort	very large tunneling magnetoresistance in layered magnetic semiconductor cri3
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/11526c5d779a414c9baf794ee9b8279b
work_keys_str_mv	AT zhewang verylargetunnelingmagnetoresistanceinlayeredmagneticsemiconductorcri3 AT ignaciogutierrezlezama verylargetunnelingmagnetoresistanceinlayeredmagneticsemiconductorcri3 AT nicolasubrig verylargetunnelingmagnetoresistanceinlayeredmagneticsemiconductorcri3 AT martinkroner verylargetunnelingmagnetoresistanceinlayeredmagneticsemiconductorcri3 AT marcogibertini verylargetunnelingmagnetoresistanceinlayeredmagneticsemiconductorcri3 AT takashitaniguchi verylargetunnelingmagnetoresistanceinlayeredmagneticsemiconductorcri3 AT kenjiwatanabe verylargetunnelingmagnetoresistanceinlayeredmagneticsemiconductorcri3 AT atacimamoglu verylargetunnelingmagnetoresistanceinlayeredmagneticsemiconductorcri3 AT enricogiannini verylargetunnelingmagnetoresistanceinlayeredmagneticsemiconductorcri3 AT albertofmorpurgo verylargetunnelingmagnetoresistanceinlayeredmagneticsemiconductorcri3
_version_	1718386823444561920

Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3

Ejemplares similares