Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers
Resonant Raman scattering (RRS) excited by the 351.1 and 363.8 nm lines of an Ar laser was studied in the temperature interval from 10 to 300 K in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound on porous InP substr...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/118bea1149594dfc8c21ca95e12730ab |
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| Sumario: | Resonant Raman scattering (RRS) excited by the 351.1 and 363.8 nm lines of an Ar
laser was studied in the temperature interval from 10 to 300 K in highly conductive ZnO
layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound on
porous InP substrates. The occurrence of RRS is attributed to the resonance of outgoing
photons scattered in multiphonon processes with electronic transitions involving an impurity
(native defects) band.
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