Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers

Resonant Raman scattering (RRS) excited by the 351.1 and 363.8 nm lines of an Ar laser was studied in the temperature interval from 10 to 300 K in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound on porous InP substr...

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Autor principal:	Zalamai, Victor
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/118bea1149594dfc8c21ca95e12730ab
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spelling	oai:doaj.org-article:118bea1149594dfc8c21ca95e12730ab2021-11-21T12:11:29ZMultiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers 2537-63651810-648Xhttps://doaj.org/article/118bea1149594dfc8c21ca95e12730ab2005-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3363https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Resonant Raman scattering (RRS) excited by the 351.1 and 363.8 nm lines of an Ar laser was studied in the temperature interval from 10 to 300 K in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound on porous InP substrates. The occurrence of RRS is attributed to the resonance of outgoing photons scattered in multiphonon processes with electronic transitions involving an impurity (native defects) band. Zalamai, VictorD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 4, Pp 464-467 (2005)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Zalamai, Victor Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers
description	Resonant Raman scattering (RRS) excited by the 351.1 and 363.8 nm lines of an Ar laser was studied in the temperature interval from 10 to 300 K in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound on porous InP substrates. The occurrence of RRS is attributed to the resonance of outgoing photons scattered in multiphonon processes with electronic transitions involving an impurity (native defects) band.
format	article
author	Zalamai, Victor
author_facet	Zalamai, Victor
author_sort	Zalamai, Victor
title	Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers
title_short	Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers
title_full	Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers
title_fullStr	Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers
title_full_unstemmed	Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers
title_sort	multiphonon impurity-mediated resonant raman scattering from highly conductive zno layers
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2005
url	https://doaj.org/article/118bea1149594dfc8c21ca95e12730ab
work_keys_str_mv	AT zalamaivictor multiphononimpuritymediatedresonantramanscatteringfromhighlyconductiveznolayers
_version_	1718419108390764544

Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers

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