Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors

Mix-dimensional van der Waals heterostructures (vdWHs) have inspired worldwide interests and efforts in the field of advanced electronics and optoelectronics. The fundamental understanding of interfacial charge transfer is of vital importance for guiding the design of functional optoelectronic appli...

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Autores principales: Ziwei Li, Wen Yang, Ming Huang, Xin Yang, Chenguang Zhu, Chenglin He, Lihui Li, Yajuan Wang, Yunfei Xie, Zhuoran Luo, Delang Liang, Jianhua Huang, Xiaoli Zhu, Xiujuan Zhuang, Dong Li, Anlian Pan
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Publicado: Institue of Optics and Electronics, Chinese Academy of Sciences 2021
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spelling oai:doaj.org-article:11a602a7c6bf499c8f9785166ec8e7fc2021-11-17T07:53:29ZLight-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors2096-457910.29026/oea.2021.210017https://doaj.org/article/11a602a7c6bf499c8f9785166ec8e7fc2021-09-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2021.210017https://doaj.org/toc/2096-4579Mix-dimensional van der Waals heterostructures (vdWHs) have inspired worldwide interests and efforts in the field of advanced electronics and optoelectronics. The fundamental understanding of interfacial charge transfer is of vital importance for guiding the design of functional optoelectronic applications. In this work, type-II 0D-2D CdSe/ZnS quantum dots/MoS2 vdWHs are designed to study the light-triggered interfacial charge behaviors and enhanced optoelectronic performances. From spectral measurements in both steady and transient states, the phenomena of suppressed photoluminescence (PL) emissions, shifted Raman signals and changed PL lifetimes provide strong evidences of efficient charge transfer at the 0D-2D interface. A series of spectral evolutions of heterostructures with various QDs overlapping concentrations at different laser powers are analyzed in details, which clarifies the dynamic competition between exciton and trion during an efficient doping of 3.9×1013 cm−2. The enhanced photoresponses (1.57×104 A·W–1) and detectivities (2.86×1011 Jones) in 0D/2D phototransistors further demonstrate that the light-induced charge transfer is still a feasible way to optimize the performance of optoelectronic devices. These results are expected to inspire the basic understanding of interfacial physics at 0D/2D interfaces, and shed the light on promoting the development of mixed-dimensional optoelectronic devices in the near future.Ziwei LiWen YangMing HuangXin YangChenguang ZhuChenglin HeLihui LiYajuan WangYunfei XieZhuoran LuoDelang LiangJianhua HuangXiaoli ZhuXiujuan ZhuangDong LiAnlian PanInstitue of Optics and Electronics, Chinese Academy of Sciencesarticleheterostructurephototransistormos2quantum dotsOptics. LightQC350-467ENOpto-Electronic Advances, Vol 4, Iss 9, Pp 1-11 (2021)
institution DOAJ
collection DOAJ
language EN
topic heterostructure
phototransistor
mos2
quantum dots
Optics. Light
QC350-467
spellingShingle heterostructure
phototransistor
mos2
quantum dots
Optics. Light
QC350-467
Ziwei Li
Wen Yang
Ming Huang
Xin Yang
Chenguang Zhu
Chenglin He
Lihui Li
Yajuan Wang
Yunfei Xie
Zhuoran Luo
Delang Liang
Jianhua Huang
Xiaoli Zhu
Xiujuan Zhuang
Dong Li
Anlian Pan
Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors
description Mix-dimensional van der Waals heterostructures (vdWHs) have inspired worldwide interests and efforts in the field of advanced electronics and optoelectronics. The fundamental understanding of interfacial charge transfer is of vital importance for guiding the design of functional optoelectronic applications. In this work, type-II 0D-2D CdSe/ZnS quantum dots/MoS2 vdWHs are designed to study the light-triggered interfacial charge behaviors and enhanced optoelectronic performances. From spectral measurements in both steady and transient states, the phenomena of suppressed photoluminescence (PL) emissions, shifted Raman signals and changed PL lifetimes provide strong evidences of efficient charge transfer at the 0D-2D interface. A series of spectral evolutions of heterostructures with various QDs overlapping concentrations at different laser powers are analyzed in details, which clarifies the dynamic competition between exciton and trion during an efficient doping of 3.9×1013 cm−2. The enhanced photoresponses (1.57×104 A·W–1) and detectivities (2.86×1011 Jones) in 0D/2D phototransistors further demonstrate that the light-induced charge transfer is still a feasible way to optimize the performance of optoelectronic devices. These results are expected to inspire the basic understanding of interfacial physics at 0D/2D interfaces, and shed the light on promoting the development of mixed-dimensional optoelectronic devices in the near future.
format article
author Ziwei Li
Wen Yang
Ming Huang
Xin Yang
Chenguang Zhu
Chenglin He
Lihui Li
Yajuan Wang
Yunfei Xie
Zhuoran Luo
Delang Liang
Jianhua Huang
Xiaoli Zhu
Xiujuan Zhuang
Dong Li
Anlian Pan
author_facet Ziwei Li
Wen Yang
Ming Huang
Xin Yang
Chenguang Zhu
Chenglin He
Lihui Li
Yajuan Wang
Yunfei Xie
Zhuoran Luo
Delang Liang
Jianhua Huang
Xiaoli Zhu
Xiujuan Zhuang
Dong Li
Anlian Pan
author_sort Ziwei Li
title Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors
title_short Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors
title_full Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors
title_fullStr Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors
title_full_unstemmed Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors
title_sort light-triggered interfacial charge transfer and enhanced photodetection in cdse/zns quantum dots/mos2 mixed-dimensional phototransistors
publisher Institue of Optics and Electronics, Chinese Academy of Sciences
publishDate 2021
url https://doaj.org/article/11a602a7c6bf499c8f9785166ec8e7fc
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