Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors
Mix-dimensional van der Waals heterostructures (vdWHs) have inspired worldwide interests and efforts in the field of advanced electronics and optoelectronics. The fundamental understanding of interfacial charge transfer is of vital importance for guiding the design of functional optoelectronic appli...
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Institue of Optics and Electronics, Chinese Academy of Sciences
2021
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oai:doaj.org-article:11a602a7c6bf499c8f9785166ec8e7fc2021-11-17T07:53:29ZLight-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors2096-457910.29026/oea.2021.210017https://doaj.org/article/11a602a7c6bf499c8f9785166ec8e7fc2021-09-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2021.210017https://doaj.org/toc/2096-4579Mix-dimensional van der Waals heterostructures (vdWHs) have inspired worldwide interests and efforts in the field of advanced electronics and optoelectronics. The fundamental understanding of interfacial charge transfer is of vital importance for guiding the design of functional optoelectronic applications. In this work, type-II 0D-2D CdSe/ZnS quantum dots/MoS2 vdWHs are designed to study the light-triggered interfacial charge behaviors and enhanced optoelectronic performances. From spectral measurements in both steady and transient states, the phenomena of suppressed photoluminescence (PL) emissions, shifted Raman signals and changed PL lifetimes provide strong evidences of efficient charge transfer at the 0D-2D interface. A series of spectral evolutions of heterostructures with various QDs overlapping concentrations at different laser powers are analyzed in details, which clarifies the dynamic competition between exciton and trion during an efficient doping of 3.9×1013 cm−2. The enhanced photoresponses (1.57×104 A·W–1) and detectivities (2.86×1011 Jones) in 0D/2D phototransistors further demonstrate that the light-induced charge transfer is still a feasible way to optimize the performance of optoelectronic devices. These results are expected to inspire the basic understanding of interfacial physics at 0D/2D interfaces, and shed the light on promoting the development of mixed-dimensional optoelectronic devices in the near future.Ziwei LiWen YangMing HuangXin YangChenguang ZhuChenglin HeLihui LiYajuan WangYunfei XieZhuoran LuoDelang LiangJianhua HuangXiaoli ZhuXiujuan ZhuangDong LiAnlian PanInstitue of Optics and Electronics, Chinese Academy of Sciencesarticleheterostructurephototransistormos2quantum dotsOptics. LightQC350-467ENOpto-Electronic Advances, Vol 4, Iss 9, Pp 1-11 (2021) |
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heterostructure phototransistor mos2 quantum dots Optics. Light QC350-467 |
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heterostructure phototransistor mos2 quantum dots Optics. Light QC350-467 Ziwei Li Wen Yang Ming Huang Xin Yang Chenguang Zhu Chenglin He Lihui Li Yajuan Wang Yunfei Xie Zhuoran Luo Delang Liang Jianhua Huang Xiaoli Zhu Xiujuan Zhuang Dong Li Anlian Pan Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors |
description |
Mix-dimensional van der Waals heterostructures (vdWHs) have inspired worldwide interests and efforts in the field of advanced electronics and optoelectronics. The fundamental understanding of interfacial charge transfer is of vital importance for guiding the design of functional optoelectronic applications. In this work, type-II 0D-2D CdSe/ZnS quantum dots/MoS2 vdWHs are designed to study the light-triggered interfacial charge behaviors and enhanced optoelectronic performances. From spectral measurements in both steady and transient states, the phenomena of suppressed photoluminescence (PL) emissions, shifted Raman signals and changed PL lifetimes provide strong evidences of efficient charge transfer at the 0D-2D interface. A series of spectral evolutions of heterostructures with various QDs overlapping concentrations at different laser powers are analyzed in details, which clarifies the dynamic competition between exciton and trion during an efficient doping of 3.9×1013 cm−2. The enhanced photoresponses (1.57×104 A·W–1) and detectivities (2.86×1011 Jones) in 0D/2D phototransistors further demonstrate that the light-induced charge transfer is still a feasible way to optimize the performance of optoelectronic devices. These results are expected to inspire the basic understanding of interfacial physics at 0D/2D interfaces, and shed the light on promoting the development of mixed-dimensional optoelectronic devices in the near future. |
format |
article |
author |
Ziwei Li Wen Yang Ming Huang Xin Yang Chenguang Zhu Chenglin He Lihui Li Yajuan Wang Yunfei Xie Zhuoran Luo Delang Liang Jianhua Huang Xiaoli Zhu Xiujuan Zhuang Dong Li Anlian Pan |
author_facet |
Ziwei Li Wen Yang Ming Huang Xin Yang Chenguang Zhu Chenglin He Lihui Li Yajuan Wang Yunfei Xie Zhuoran Luo Delang Liang Jianhua Huang Xiaoli Zhu Xiujuan Zhuang Dong Li Anlian Pan |
author_sort |
Ziwei Li |
title |
Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors |
title_short |
Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors |
title_full |
Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors |
title_fullStr |
Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors |
title_full_unstemmed |
Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors |
title_sort |
light-triggered interfacial charge transfer and enhanced photodetection in cdse/zns quantum dots/mos2 mixed-dimensional phototransistors |
publisher |
Institue of Optics and Electronics, Chinese Academy of Sciences |
publishDate |
2021 |
url |
https://doaj.org/article/11a602a7c6bf499c8f9785166ec8e7fc |
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