Optical properties and electronic structure of polycrystalline Cu-(In Ga)-Se alloys
The optical properties of bulk Cu-(In Ga )-Se alloys grown by the Bridgman metho are presented. The optical measurements were performed at room temperature in the photo energy range from 0.8 to 4.7eV using a variable-angle spectroscopic ellipsometer. The spec tral dependences of the complex dielec...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2009
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/11c37694cfef4ef6acf6fcd98009f154 |
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| Sumario: | The optical properties of bulk Cu-(In Ga )-Se alloys grown by the Bridgman metho
are presented. The optical measurements were performed at room temperature in the photo
energy range from 0.8 to 4.7eV using a variable-angle spectroscopic ellipsometer. The spec
tral dependences of the complex dielectric function, the refractive index, the absorption coe
ficient and the normal-incidence reflectivity were derived. The observed structures attribute
to the interband transitions E0 , E1A , and E1B were modelled using a modification of the Ada
chi’s model. The model parameters were determined using the simulated annealing (SA) algo
rithm. The values of E0 and E1A were found to increase linearly with Ga content. |
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