Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens

A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account, otherwise the measured electron concentration pr...

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Autores principales:	Tatyana G. Yugova, Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Irina B. Parfent'eva
Formato:	article
Lenguaje:	EN
Publicado:	Pensoft Publishers 2021
Materias:	Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/1243a2d6f3114828a3ee1bb2993d629e
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spelling	oai:doaj.org-article:1243a2d6f3114828a3ee1bb2993d629e2021-12-03T04:30:35ZComparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens10.3897/j.moem.7.3.767002452-1779https://doaj.org/article/1243a2d6f3114828a3ee1bb2993d629e2021-09-01T00:00:00Zhttps://moem.pensoft.net/article/76700/download/pdf/https://moem.pensoft.net/article/76700/download/xml/https://moem.pensoft.net/article/76700/https://doaj.org/toc/2452-1779A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account, otherwise the measured electron concentration proves to be overestimated. A correlation between the electron concentration Nopt and the characteristic wavenumber ν+ has been calculated and proves to be well fit by a third order polynomial. The test specimens have been obtained by tin or sulfur doping of indium arsenide. The electron concentration in the specimens has been measured at room temperature using two methods: the optical method developed by the Authors (Nopt) and the conventional four-probe Hall method (the Van der Pau method, NHall). The reflecting surfaces of the specimens have been chemically polished or fine abrasive ground. The condition Nopt &gt; NHall has been shown to hold for all the test specimens. The difference between the optical and the Hall electron concentrations is greater for specimens having polished reflecting surfaces. The experimental data have been compared with earlier data for n-GaAs. A qualitative model explaining the experimental data has been suggested.Tatyana G. YugovaAleksandr G. BelovVladimir E. KanevskiiEvgeniya I. KladovaStanislav N. KnyazevIrina B. Parfent'evaPensoft PublishersarticleElectronicsTK7800-8360ENModern Electronic Materials, Vol 7, Iss 3, Pp 79-84 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electronics TK7800-8360
spellingShingle	Electronics TK7800-8360 Tatyana G. Yugova Aleksandr G. Belov Vladimir E. Kanevskii Evgeniya I. Kladova Stanislav N. Knyazev Irina B. Parfent'eva Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens
description	A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account, otherwise the measured electron concentration proves to be overestimated. A correlation between the electron concentration Nopt and the characteristic wavenumber ν+ has been calculated and proves to be well fit by a third order polynomial. The test specimens have been obtained by tin or sulfur doping of indium arsenide. The electron concentration in the specimens has been measured at room temperature using two methods: the optical method developed by the Authors (Nopt) and the conventional four-probe Hall method (the Van der Pau method, NHall). The reflecting surfaces of the specimens have been chemically polished or fine abrasive ground. The condition Nopt &gt; NHall has been shown to hold for all the test specimens. The difference between the optical and the Hall electron concentrations is greater for specimens having polished reflecting surfaces. The experimental data have been compared with earlier data for n-GaAs. A qualitative model explaining the experimental data has been suggested.
format	article
author	Tatyana G. Yugova Aleksandr G. Belov Vladimir E. Kanevskii Evgeniya I. Kladova Stanislav N. Knyazev Irina B. Parfent'eva
author_facet	Tatyana G. Yugova Aleksandr G. Belov Vladimir E. Kanevskii Evgeniya I. Kladova Stanislav N. Knyazev Irina B. Parfent'eva
author_sort	Tatyana G. Yugova
title	Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens
title_short	Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens
title_full	Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens
title_fullStr	Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens
title_full_unstemmed	Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens
title_sort	comparison between results of optical and electrical measurements of free electron concentration in n-inas specimens
publisher	Pensoft Publishers
publishDate	2021
url	https://doaj.org/article/1243a2d6f3114828a3ee1bb2993d629e
work_keys_str_mv	AT tatyanagyugova comparisonbetweenresultsofopticalandelectricalmeasurementsoffreeelectronconcentrationinninasspecimens AT aleksandrgbelov comparisonbetweenresultsofopticalandelectricalmeasurementsoffreeelectronconcentrationinninasspecimens AT vladimirekanevskii comparisonbetweenresultsofopticalandelectricalmeasurementsoffreeelectronconcentrationinninasspecimens AT evgeniyaikladova comparisonbetweenresultsofopticalandelectricalmeasurementsoffreeelectronconcentrationinninasspecimens AT stanislavnknyazev comparisonbetweenresultsofopticalandelectricalmeasurementsoffreeelectronconcentrationinninasspecimens AT irinabparfenteva comparisonbetweenresultsofopticalandelectricalmeasurementsoffreeelectronconcentrationinninasspecimens
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Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens

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