Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 2
Abstract We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn $$_{1-x}$$ 1 - x Co $$_{x}$$ x ) $$_{2}$$ 2 As $$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site...
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2021
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oai:doaj.org-article:127f24fa5e8d408e9481f1573a7237ed2021-12-02T14:17:19ZDrastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 210.1038/s41598-021-86205-22045-2322https://doaj.org/article/127f24fa5e8d408e9481f1573a7237ed2021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-86205-2https://doaj.org/toc/2045-2322Abstract We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn $$_{1-x}$$ 1 - x Co $$_{x}$$ x ) $$_{2}$$ 2 As $$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by $$\sim$$ ∼ 0.3 $$\%$$ % with 15 $$\%$$ % Sr doping, but drastically increase the ferromagnetic transition temperature by 18 $$\%$$ % to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As $$_{4}$$ 4 tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 2 DMS.Licheng FuYilun GuGuoxiang ZhiHaojie ZhangRufei ZhangJinou DongXueqin ZhaoLingfeng XieFanlong NingNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021) |
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Medicine R Science Q Licheng Fu Yilun Gu Guoxiang Zhi Haojie Zhang Rufei Zhang Jinou Dong Xueqin Zhao Lingfeng Xie Fanlong Ning Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 2 |
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Abstract We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn $$_{1-x}$$ 1 - x Co $$_{x}$$ x ) $$_{2}$$ 2 As $$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by $$\sim$$ ∼ 0.3 $$\%$$ % with 15 $$\%$$ % Sr doping, but drastically increase the ferromagnetic transition temperature by 18 $$\%$$ % to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As $$_{4}$$ 4 tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 2 DMS. |
| format |
article |
| author |
Licheng Fu Yilun Gu Guoxiang Zhi Haojie Zhang Rufei Zhang Jinou Dong Xueqin Zhao Lingfeng Xie Fanlong Ning |
| author_facet |
Licheng Fu Yilun Gu Guoxiang Zhi Haojie Zhang Rufei Zhang Jinou Dong Xueqin Zhao Lingfeng Xie Fanlong Ning |
| author_sort |
Licheng Fu |
| title |
Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 2 |
| title_short |
Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 2 |
| title_full |
Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 2 |
| title_fullStr |
Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 2 |
| title_full_unstemmed |
Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 2 |
| title_sort |
drastic improvement of curie temperature by chemical pressure in n-type diluted magnetic semiconductor ba(zn,co) $$_{2}$$ 2 as $$_{2}$$ 2 |
| publisher |
Nature Portfolio |
| publishDate |
2021 |
| url |
https://doaj.org/article/127f24fa5e8d408e9481f1573a7237ed |
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