Phonon-assisted electronic states modulation of few-layer PdSe2 at terahertz frequencies

Abstract Information technology demands high-speed optoelectronic devices, but going beyond the one terahertz (THz) barrier is challenging due to the difficulties associated with generating, detecting, and processing high-frequency signals. Here, we show that femtosecond-laser-driven phonons can be...

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Autores principales: Ziqi Li, Bo Peng, Miao-Ling Lin, Yu-Chen Leng, Bin Zhang, Chi Pang, Ping-Heng Tan, Bartomeu Monserrat, Feng Chen
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Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/128c4c162f9d461ba6b8d44cc95f564e
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spelling oai:doaj.org-article:128c4c162f9d461ba6b8d44cc95f564e2021-11-28T12:40:44ZPhonon-assisted electronic states modulation of few-layer PdSe2 at terahertz frequencies10.1038/s41699-021-00268-32397-7132https://doaj.org/article/128c4c162f9d461ba6b8d44cc95f564e2021-11-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00268-3https://doaj.org/toc/2397-7132Abstract Information technology demands high-speed optoelectronic devices, but going beyond the one terahertz (THz) barrier is challenging due to the difficulties associated with generating, detecting, and processing high-frequency signals. Here, we show that femtosecond-laser-driven phonons can be utilized to coherently manipulate the excitonic properties of semiconductors at THz frequencies. The precise control of the pump and subsequent time-delayed broadband probe pulses enables the simultaneous generation and detection processes of both periodic lattice vibrations and their couplings with electronic states. Combining ultralow frequency Raman spectroscopy with first-principles calculations, we identify the unique phonon mode-selective and probe-energy dependent features of electron–phonon interactions in layered PdSe2. Two distinctive types of coherent phonon excitations could couple preferentially to different types of electronic excitations: the intralayer (4.3 THz) mode to carriers and the interlayer (0.35 THz) mode to excitons. This work provides new insights to understand the excited-state phonon interactions of 2D materials and to achieve future applications of optoelectronic devices operating at THz frequencies.Ziqi LiBo PengMiao-Ling LinYu-Chen LengBin ZhangChi PangPing-Heng TanBartomeu MonserratFeng ChenNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
spellingShingle Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
Ziqi Li
Bo Peng
Miao-Ling Lin
Yu-Chen Leng
Bin Zhang
Chi Pang
Ping-Heng Tan
Bartomeu Monserrat
Feng Chen
Phonon-assisted electronic states modulation of few-layer PdSe2 at terahertz frequencies
description Abstract Information technology demands high-speed optoelectronic devices, but going beyond the one terahertz (THz) barrier is challenging due to the difficulties associated with generating, detecting, and processing high-frequency signals. Here, we show that femtosecond-laser-driven phonons can be utilized to coherently manipulate the excitonic properties of semiconductors at THz frequencies. The precise control of the pump and subsequent time-delayed broadband probe pulses enables the simultaneous generation and detection processes of both periodic lattice vibrations and their couplings with electronic states. Combining ultralow frequency Raman spectroscopy with first-principles calculations, we identify the unique phonon mode-selective and probe-energy dependent features of electron–phonon interactions in layered PdSe2. Two distinctive types of coherent phonon excitations could couple preferentially to different types of electronic excitations: the intralayer (4.3 THz) mode to carriers and the interlayer (0.35 THz) mode to excitons. This work provides new insights to understand the excited-state phonon interactions of 2D materials and to achieve future applications of optoelectronic devices operating at THz frequencies.
format article
author Ziqi Li
Bo Peng
Miao-Ling Lin
Yu-Chen Leng
Bin Zhang
Chi Pang
Ping-Heng Tan
Bartomeu Monserrat
Feng Chen
author_facet Ziqi Li
Bo Peng
Miao-Ling Lin
Yu-Chen Leng
Bin Zhang
Chi Pang
Ping-Heng Tan
Bartomeu Monserrat
Feng Chen
author_sort Ziqi Li
title Phonon-assisted electronic states modulation of few-layer PdSe2 at terahertz frequencies
title_short Phonon-assisted electronic states modulation of few-layer PdSe2 at terahertz frequencies
title_full Phonon-assisted electronic states modulation of few-layer PdSe2 at terahertz frequencies
title_fullStr Phonon-assisted electronic states modulation of few-layer PdSe2 at terahertz frequencies
title_full_unstemmed Phonon-assisted electronic states modulation of few-layer PdSe2 at terahertz frequencies
title_sort phonon-assisted electronic states modulation of few-layer pdse2 at terahertz frequencies
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/128c4c162f9d461ba6b8d44cc95f564e
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AT bopeng phononassistedelectronicstatesmodulationoffewlayerpdse2atterahertzfrequencies
AT miaolinglin phononassistedelectronicstatesmodulationoffewlayerpdse2atterahertzfrequencies
AT yuchenleng phononassistedelectronicstatesmodulationoffewlayerpdse2atterahertzfrequencies
AT binzhang phononassistedelectronicstatesmodulationoffewlayerpdse2atterahertzfrequencies
AT chipang phononassistedelectronicstatesmodulationoffewlayerpdse2atterahertzfrequencies
AT pinghengtan phononassistedelectronicstatesmodulationoffewlayerpdse2atterahertzfrequencies
AT bartomeumonserrat phononassistedelectronicstatesmodulationoffewlayerpdse2atterahertzfrequencies
AT fengchen phononassistedelectronicstatesmodulationoffewlayerpdse2atterahertzfrequencies
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