2D Bi2Se3 materials for optoelectronics

Summary: 2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface state...

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Autores principales:	Fakun K. Wang, Sijie J. Yang, Tianyou Y. Zhai
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	Optoelectronics Nanomaterials Materials application Science Q
Acceso en línea:	https://doaj.org/article/12d72ca41f66444e9041ea36b7ad4215
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id	oai:doaj.org-article:12d72ca41f66444e9041ea36b7ad4215
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spelling	oai:doaj.org-article:12d72ca41f66444e9041ea36b7ad42152021-11-20T05:09:29Z2D Bi2Se3 materials for optoelectronics2589-004210.1016/j.isci.2021.103291https://doaj.org/article/12d72ca41f66444e9041ea36b7ad42152021-11-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2589004221012608https://doaj.org/toc/2589-0042Summary: 2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.Fakun K. WangSijie J. YangTianyou Y. ZhaiElsevierarticleOptoelectronicsNanomaterialsMaterials applicationScienceQENiScience, Vol 24, Iss 11, Pp 103291- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Optoelectronics Nanomaterials Materials application Science Q
spellingShingle	Optoelectronics Nanomaterials Materials application Science Q Fakun K. Wang Sijie J. Yang Tianyou Y. Zhai 2D Bi2Se3 materials for optoelectronics
description	Summary: 2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.
format	article
author	Fakun K. Wang Sijie J. Yang Tianyou Y. Zhai
author_facet	Fakun K. Wang Sijie J. Yang Tianyou Y. Zhai
author_sort	Fakun K. Wang
title	2D Bi2Se3 materials for optoelectronics
title_short	2D Bi2Se3 materials for optoelectronics
title_full	2D Bi2Se3 materials for optoelectronics
title_fullStr	2D Bi2Se3 materials for optoelectronics
title_full_unstemmed	2D Bi2Se3 materials for optoelectronics
title_sort	2d bi2se3 materials for optoelectronics
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/12d72ca41f66444e9041ea36b7ad4215
work_keys_str_mv	AT fakunkwang 2dbi2se3materialsforoptoelectronics AT sijiejyang 2dbi2se3materialsforoptoelectronics AT tianyouyzhai 2dbi2se3materialsforoptoelectronics
_version_	1718419525736595456

2D Bi2Se3 materials for optoelectronics

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