Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering

Abstract The lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si–Ge–Te system are of interest for many applications such as optical data storage, op...

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Autores principales:	C. Mihai, F. Sava, I. D. Simandan, A. C. Galca, I. Burducea, N. Becherescu, A. Velea
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/130a27713e264d41b1bc279935ae38c6
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spelling	oai:doaj.org-article:130a27713e264d41b1bc279935ae38c62021-12-02T18:25:05ZStructural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering10.1038/s41598-021-91138-x2045-2322https://doaj.org/article/130a27713e264d41b1bc279935ae38c62021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-91138-xhttps://doaj.org/toc/2045-2322Abstract The lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si–Ge–Te system are of interest for many applications such as optical data storage, optical sensors and Ovonic threshold switches. But an extended exploration of this system is still missing. In this study, magnetron co-sputtering is used for the combinatorial synthesis of thin film libraries, outside the glass formation domain. Compositional, structural and optical properties are investigated and discussed in the framework of topological constraint theory. The materials in the library are classified as stressed-rigid amorphous networks. The bandgap is heavily influenced by the Te content while the near-IR refractive index dependence on Ge concentration shows a minimum, which could be exploited in applications. A transition from a disordered to a more ordered amorphous network at 60 at% Te, is observed. The thermal stability study shows that the formed crystalline phases are dictated by the concentration of Ge and Te. New amorphous compositions in the Si–Ge–Te system were found and their properties explored, thus enabling an informed and rapid material selection and design for applications.C. MihaiF. SavaI. D. SimandanA. C. GalcaI. BurduceaN. BecherescuA. VeleaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-15 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q C. Mihai F. Sava I. D. Simandan A. C. Galca I. Burducea N. Becherescu A. Velea Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
description	Abstract The lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si–Ge–Te system are of interest for many applications such as optical data storage, optical sensors and Ovonic threshold switches. But an extended exploration of this system is still missing. In this study, magnetron co-sputtering is used for the combinatorial synthesis of thin film libraries, outside the glass formation domain. Compositional, structural and optical properties are investigated and discussed in the framework of topological constraint theory. The materials in the library are classified as stressed-rigid amorphous networks. The bandgap is heavily influenced by the Te content while the near-IR refractive index dependence on Ge concentration shows a minimum, which could be exploited in applications. A transition from a disordered to a more ordered amorphous network at 60 at% Te, is observed. The thermal stability study shows that the formed crystalline phases are dictated by the concentration of Ge and Te. New amorphous compositions in the Si–Ge–Te system were found and their properties explored, thus enabling an informed and rapid material selection and design for applications.
format	article
author	C. Mihai F. Sava I. D. Simandan A. C. Galca I. Burducea N. Becherescu A. Velea
author_facet	C. Mihai F. Sava I. D. Simandan A. C. Galca I. Burducea N. Becherescu A. Velea
author_sort	C. Mihai
title	Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
title_short	Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
title_full	Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
title_fullStr	Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
title_full_unstemmed	Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
title_sort	structural and optical properties of amorphous si–ge–te thin films prepared by combinatorial sputtering
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/130a27713e264d41b1bc279935ae38c6
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Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering

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