Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction

This study mainly investigates the defect interaction mediated ionic conductivity of Ce0.9Sm0.1O1.95. The ionic conductivity mainly depends on the concentration of free oxygen vacancies. The formed oxygen vacancies are bounded with dopant cations due to columbic interaction which depends on the diel...

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Autores principales: Sk. Anirban, Abhigyan Dutta
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Lenguaje:EN
Publicado: Elsevier 2021
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Acceso en línea:https://doaj.org/article/137c1db6a3314bbab3a79fb447ee829e
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spelling oai:doaj.org-article:137c1db6a3314bbab3a79fb447ee829e2021-11-18T04:51:23ZImpact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction2590-150810.1016/j.mlblux.2021.100111https://doaj.org/article/137c1db6a3314bbab3a79fb447ee829e2021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2590150821000521https://doaj.org/toc/2590-1508This study mainly investigates the defect interaction mediated ionic conductivity of Ce0.9Sm0.1O1.95. The ionic conductivity mainly depends on the concentration of free oxygen vacancies. The formed oxygen vacancies are bounded with dopant cations due to columbic interaction which depends on the dielectric constant of the material. With the rise in temperature dielectric constant increases and dopant–vacancy association decreases. Consequently, ionic conductivity increases with temperature due to the enhancement of concentration of free oxygen vacancies. The association and migration energy decrease at higher temperature.Sk. AnirbanAbhigyan DuttaElsevierarticleDoped ceriaDefectsDielectricsDopant–vacancy interactionIonic conductivityMaterials of engineering and construction. Mechanics of materialsTA401-492ENMaterials Letters: X, Vol 12, Iss , Pp 100111- (2021)
institution DOAJ
collection DOAJ
language EN
topic Doped ceria
Defects
Dielectrics
Dopant–vacancy interaction
Ionic conductivity
Materials of engineering and construction. Mechanics of materials
TA401-492
spellingShingle Doped ceria
Defects
Dielectrics
Dopant–vacancy interaction
Ionic conductivity
Materials of engineering and construction. Mechanics of materials
TA401-492
Sk. Anirban
Abhigyan Dutta
Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction
description This study mainly investigates the defect interaction mediated ionic conductivity of Ce0.9Sm0.1O1.95. The ionic conductivity mainly depends on the concentration of free oxygen vacancies. The formed oxygen vacancies are bounded with dopant cations due to columbic interaction which depends on the dielectric constant of the material. With the rise in temperature dielectric constant increases and dopant–vacancy association decreases. Consequently, ionic conductivity increases with temperature due to the enhancement of concentration of free oxygen vacancies. The association and migration energy decrease at higher temperature.
format article
author Sk. Anirban
Abhigyan Dutta
author_facet Sk. Anirban
Abhigyan Dutta
author_sort Sk. Anirban
title Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction
title_short Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction
title_full Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction
title_fullStr Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction
title_full_unstemmed Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction
title_sort impact of dielectric properties on ionic conductivity of ce0.9sm0.1o1.95 via defect interaction
publisher Elsevier
publishDate 2021
url https://doaj.org/article/137c1db6a3314bbab3a79fb447ee829e
work_keys_str_mv AT skanirban impactofdielectricpropertiesonionicconductivityofce09sm01o195viadefectinteraction
AT abhigyandutta impactofdielectricpropertiesonionicconductivityofce09sm01o195viadefectinteraction
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