Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction
This study mainly investigates the defect interaction mediated ionic conductivity of Ce0.9Sm0.1O1.95. The ionic conductivity mainly depends on the concentration of free oxygen vacancies. The formed oxygen vacancies are bounded with dopant cations due to columbic interaction which depends on the diel...
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2021
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oai:doaj.org-article:137c1db6a3314bbab3a79fb447ee829e2021-11-18T04:51:23ZImpact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction2590-150810.1016/j.mlblux.2021.100111https://doaj.org/article/137c1db6a3314bbab3a79fb447ee829e2021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2590150821000521https://doaj.org/toc/2590-1508This study mainly investigates the defect interaction mediated ionic conductivity of Ce0.9Sm0.1O1.95. The ionic conductivity mainly depends on the concentration of free oxygen vacancies. The formed oxygen vacancies are bounded with dopant cations due to columbic interaction which depends on the dielectric constant of the material. With the rise in temperature dielectric constant increases and dopant–vacancy association decreases. Consequently, ionic conductivity increases with temperature due to the enhancement of concentration of free oxygen vacancies. The association and migration energy decrease at higher temperature.Sk. AnirbanAbhigyan DuttaElsevierarticleDoped ceriaDefectsDielectricsDopant–vacancy interactionIonic conductivityMaterials of engineering and construction. Mechanics of materialsTA401-492ENMaterials Letters: X, Vol 12, Iss , Pp 100111- (2021) |
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Doped ceria Defects Dielectrics Dopant–vacancy interaction Ionic conductivity Materials of engineering and construction. Mechanics of materials TA401-492 |
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Doped ceria Defects Dielectrics Dopant–vacancy interaction Ionic conductivity Materials of engineering and construction. Mechanics of materials TA401-492 Sk. Anirban Abhigyan Dutta Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction |
description |
This study mainly investigates the defect interaction mediated ionic conductivity of Ce0.9Sm0.1O1.95. The ionic conductivity mainly depends on the concentration of free oxygen vacancies. The formed oxygen vacancies are bounded with dopant cations due to columbic interaction which depends on the dielectric constant of the material. With the rise in temperature dielectric constant increases and dopant–vacancy association decreases. Consequently, ionic conductivity increases with temperature due to the enhancement of concentration of free oxygen vacancies. The association and migration energy decrease at higher temperature. |
format |
article |
author |
Sk. Anirban Abhigyan Dutta |
author_facet |
Sk. Anirban Abhigyan Dutta |
author_sort |
Sk. Anirban |
title |
Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction |
title_short |
Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction |
title_full |
Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction |
title_fullStr |
Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction |
title_full_unstemmed |
Impact of dielectric properties on ionic conductivity of Ce0.9Sm0.1O1.95 via defect interaction |
title_sort |
impact of dielectric properties on ionic conductivity of ce0.9sm0.1o1.95 via defect interaction |
publisher |
Elsevier |
publishDate |
2021 |
url |
https://doaj.org/article/137c1db6a3314bbab3a79fb447ee829e |
work_keys_str_mv |
AT skanirban impactofdielectricpropertiesonionicconductivityofce09sm01o195viadefectinteraction AT abhigyandutta impactofdielectricpropertiesonionicconductivityofce09sm01o195viadefectinteraction |
_version_ |
1718424958084841472 |