Deep gallium-induced defect states in Pb1-xSnxTe
The galvanomagnetic effects in Pb1-xSnxTe: Ga under variation of alloy composition were investigated. It was found for samples with tin content x≤0.06 the temperature dependences of resistivity and the Hall coefficient have a low temperature activation range of impurity ionization, while for samp...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/139461ae82f24184b605a20081e733db |
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| Sumario: | The galvanomagnetic effects in Pb1-xSnxTe: Ga under variation of alloy composition were
investigated. It was found for samples with tin content x≤0.06 the temperature dependences of
resistivity and the Hall coefficient have a low temperature activation range of impurity ionization,
while for samples with 0.09≤x≤0.21 they have a “metallic” character. The results were discussed
assuming an appearance of two different deep impurity levels EGa1 and EGa stabilizing the Fermi
level in the energy spectrum. The activation energy for “insulating” samples as well as the Fermi
level position for “metallic” samples were determined and used to build the energy level diagram. |
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