Deep gallium-induced defect states in Pb1-xSnxTe

The galvanomagnetic effects in Pb1-xSnxTe: Ga under variation of alloy composition were investigated. It was found for samples with tin content x≤0.06 the temperature dependences of resistivity and the Hall coefficient have a low temperature activation range of impurity ionization, while for samp...

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Autores principales:	Skipetrov, E., Zvereva, E., Dmitriev, N., Golubev, A., Sliniko, V.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/139461ae82f24184b605a20081e733db
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spelling	oai:doaj.org-article:139461ae82f24184b605a20081e733db2021-11-21T12:10:08ZDeep gallium-induced defect states in Pb1-xSnxTe2537-63651810-648Xhttps://doaj.org/article/139461ae82f24184b605a20081e733db2006-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3413https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The galvanomagnetic effects in Pb1-xSnxTe: Ga under variation of alloy composition were investigated. It was found for samples with tin content x≤0.06 the temperature dependences of resistivity and the Hall coefficient have a low temperature activation range of impurity ionization, while for samples with 0.09≤x≤0.21 they have a “metallic” character. The results were discussed assuming an appearance of two different deep impurity levels EGa1 and EGa stabilizing the Fermi level in the energy spectrum. The activation energy for “insulating” samples as well as the Fermi level position for “metallic” samples were determined and used to build the energy level diagram. Skipetrov, E.Zvereva, E.Dmitriev, N.Golubev, A.Sliniko, V.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 1, Pp 32-36 (2006)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Skipetrov, E. Zvereva, E. Dmitriev, N. Golubev, A. Sliniko, V. Deep gallium-induced defect states in Pb1-xSnxTe
description	The galvanomagnetic effects in Pb1-xSnxTe: Ga under variation of alloy composition were investigated. It was found for samples with tin content x≤0.06 the temperature dependences of resistivity and the Hall coefficient have a low temperature activation range of impurity ionization, while for samples with 0.09≤x≤0.21 they have a “metallic” character. The results were discussed assuming an appearance of two different deep impurity levels EGa1 and EGa stabilizing the Fermi level in the energy spectrum. The activation energy for “insulating” samples as well as the Fermi level position for “metallic” samples were determined and used to build the energy level diagram.
format	article
author	Skipetrov, E. Zvereva, E. Dmitriev, N. Golubev, A. Sliniko, V.
author_facet	Skipetrov, E. Zvereva, E. Dmitriev, N. Golubev, A. Sliniko, V.
author_sort	Skipetrov, E.
title	Deep gallium-induced defect states in Pb1-xSnxTe
title_short	Deep gallium-induced defect states in Pb1-xSnxTe
title_full	Deep gallium-induced defect states in Pb1-xSnxTe
title_fullStr	Deep gallium-induced defect states in Pb1-xSnxTe
title_full_unstemmed	Deep gallium-induced defect states in Pb1-xSnxTe
title_sort	deep gallium-induced defect states in pb1-xsnxte
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2006
url	https://doaj.org/article/139461ae82f24184b605a20081e733db
work_keys_str_mv	AT skipetrove deepgalliuminduceddefectstatesinpb1xsnxte AT zverevae deepgalliuminduceddefectstatesinpb1xsnxte AT dmitrievn deepgalliuminduceddefectstatesinpb1xsnxte AT golubeva deepgalliuminduceddefectstatesinpb1xsnxte AT slinikov deepgalliuminduceddefectstatesinpb1xsnxte
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Deep gallium-induced defect states in Pb1-xSnxTe

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