Deep gallium-induced defect states in Pb1-xSnxTe
The galvanomagnetic effects in Pb1-xSnxTe: Ga under variation of alloy composition were investigated. It was found for samples with tin content x≤0.06 the temperature dependences of resistivity and the Hall coefficient have a low temperature activation range of impurity ionization, while for samp...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/139461ae82f24184b605a20081e733db |
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