Yu, S., White, M. H., & Agarwal, A. K. (2021). Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. IEEE.
Chicago Style (17th ed.) CitationYu, Susanna, Marvin H. White, and Anant K. Agarwal. Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. IEEE, 2021.
MLA (8th ed.) CitationYu, Susanna, et al. Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. IEEE, 2021.
Warning: These citations may not always be 100% accurate.