Cita APA (7a ed.)

Yu, S., White, M. H., & Agarwal, A. K. (2021). Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. IEEE.

Cita Chicago Style (17a ed.)

Yu, Susanna, Marvin H. White, y Anant K. Agarwal. Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. IEEE, 2021.

Cita MLA (8a ed.)

Yu, Susanna, et al. Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. IEEE, 2021.