Yu, S., White, M. H., & Agarwal, A. K. (2021). Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. IEEE.
Style de citation Chicago (17e éd.)Yu, Susanna, Marvin H. White, et Anant K. Agarwal. Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. IEEE, 2021.
Style de citation MLA (8e éd.)Yu, Susanna, et al. Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. IEEE, 2021.
Attention : ces citations peuvent ne pas être correctes à 100%.