Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs

We measure interface trap density near the conduction band edge and fixed oxide charge in commercial, packaged, 4H-SiC 1.2 kV planar Power MOSFETs. These traps determine the device threshold voltage, performance, and reliability. The subthreshold slope is used to extract interface trap density at th...

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Autores principales:	Susanna Yu, Marvin H. White, Anant K. Agarwal
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Silicon carbide (SiC) power MOSFET oxide reliability interface trap density oxide charge subthreshold slope Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/139bcc50ed04403e87e1cbfc5d812f11
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spelling	oai:doaj.org-article:139bcc50ed04403e87e1cbfc5d812f112021-11-18T00:04:42ZExperimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs2169-353610.1109/ACCESS.2021.3124706https://doaj.org/article/139bcc50ed04403e87e1cbfc5d812f112021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9597510/https://doaj.org/toc/2169-3536We measure interface trap density near the conduction band edge and fixed oxide charge in commercial, packaged, 4H-SiC 1.2 kV planar Power MOSFETs. These traps determine the device threshold voltage, performance, and reliability. The subthreshold slope is used to extract interface trap density at the SiO<sub>2</sub>-SiC interface near the conduction band edge from three vendors, which varies from <inline-formula> <tex-math notation="LaTeX">$5.8\times 10 ^{12}$ </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">$9.3\times 10 ^{12}$ </tex-math></inline-formula> cm<inline-formula> <tex-math notation="LaTeX">$^{-2}\cdot $ </tex-math></inline-formula>eV<sup>−1</sup>. Good agreement is obtained with threshold voltage measurements from 25°C to 150°C as devices with the highest interface trap densities exhibit the largest threshold voltage reduction over temperature. Fixed positive oxide charge, <inline-formula> <tex-math notation="LaTeX">$N_{ot}$ </tex-math></inline-formula>, balanced with interface traps and substrate doping, varies from <inline-formula> <tex-math notation="LaTeX">$3.3\times 10 ^{12}$ </tex-math></inline-formula> cm<sup>−2</sup> to <inline-formula> <tex-math notation="LaTeX">$3.7\times 10 ^{12}$ </tex-math></inline-formula> cm<sup>−2</sup>. At high temperatures, electrons captured in interface traps emit to the conduction band and lower the threshold voltage together with fixed oxide charges, which are as high as interface trap densities. Thus, device design should be considered for a suitable threshold voltage to ensure the device does not operate in a Normally-ON condition and to protect against gate voltage surges. Therefore, more focus on characterization and reduction of the interface trap density and fixed oxide charge is needed to enable further improvement in effective electron mobility of SiC MOSFETs.Susanna YuMarvin H. WhiteAnant K. AgarwalIEEEarticleSilicon carbide (SiC)power MOSFEToxide reliabilityinterface trap densityoxide chargesubthreshold slopeElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Access, Vol 9, Pp 149118-149124 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Silicon carbide (SiC) power MOSFET oxide reliability interface trap density oxide charge subthreshold slope Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Silicon carbide (SiC) power MOSFET oxide reliability interface trap density oxide charge subthreshold slope Electrical engineering. Electronics. Nuclear engineering TK1-9971 Susanna Yu Marvin H. White Anant K. Agarwal Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs
description	We measure interface trap density near the conduction band edge and fixed oxide charge in commercial, packaged, 4H-SiC 1.2 kV planar Power MOSFETs. These traps determine the device threshold voltage, performance, and reliability. The subthreshold slope is used to extract interface trap density at the SiO<sub>2</sub>-SiC interface near the conduction band edge from three vendors, which varies from <inline-formula> <tex-math notation="LaTeX">$5.8\times 10 ^{12}$ </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">$9.3\times 10 ^{12}$ </tex-math></inline-formula> cm<inline-formula> <tex-math notation="LaTeX">$^{-2}\cdot $ </tex-math></inline-formula>eV<sup>−1</sup>. Good agreement is obtained with threshold voltage measurements from 25°C to 150°C as devices with the highest interface trap densities exhibit the largest threshold voltage reduction over temperature. Fixed positive oxide charge, <inline-formula> <tex-math notation="LaTeX">$N_{ot}$ </tex-math></inline-formula>, balanced with interface traps and substrate doping, varies from <inline-formula> <tex-math notation="LaTeX">$3.3\times 10 ^{12}$ </tex-math></inline-formula> cm<sup>−2</sup> to <inline-formula> <tex-math notation="LaTeX">$3.7\times 10 ^{12}$ </tex-math></inline-formula> cm<sup>−2</sup>. At high temperatures, electrons captured in interface traps emit to the conduction band and lower the threshold voltage together with fixed oxide charges, which are as high as interface trap densities. Thus, device design should be considered for a suitable threshold voltage to ensure the device does not operate in a Normally-ON condition and to protect against gate voltage surges. Therefore, more focus on characterization and reduction of the interface trap density and fixed oxide charge is needed to enable further improvement in effective electron mobility of SiC MOSFETs.
format	article
author	Susanna Yu Marvin H. White Anant K. Agarwal
author_facet	Susanna Yu Marvin H. White Anant K. Agarwal
author_sort	Susanna Yu
title	Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs
title_short	Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs
title_full	Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs
title_fullStr	Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs
title_full_unstemmed	Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs
title_sort	experimental determination of interface trap density and fixed positive oxide charge in commercial 4h-sic power mosfets
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/139bcc50ed04403e87e1cbfc5d812f11
work_keys_str_mv	AT susannayu experimentaldeterminationofinterfacetrapdensityandfixedpositiveoxidechargeincommercial4hsicpowermosfets AT marvinhwhite experimentaldeterminationofinterfacetrapdensityandfixedpositiveoxidechargeincommercial4hsicpowermosfets AT anantkagarwal experimentaldeterminationofinterfacetrapdensityandfixedpositiveoxidechargeincommercial4hsicpowermosfets
_version_	1718425207791681536

Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs

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