Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs
We measure interface trap density near the conduction band edge and fixed oxide charge in commercial, packaged, 4H-SiC 1.2 kV planar Power MOSFETs. These traps determine the device threshold voltage, performance, and reliability. The subthreshold slope is used to extract interface trap density at th...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/139bcc50ed04403e87e1cbfc5d812f11 |
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