Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices

This experiment studied the effects of multi-layer Ti/Al electrodes, ohmic groove etching, and annealing temperature on the ohmic characteristics, output characteristics, and surface topography of AlGaN/GaN high electron mobility transistor (HEMT) devices. In the experiment, we prepared the device s...

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Autores principales:	Yanxu Zhu, Jianwei Li, Qixuan Li, Xiaomeng Song, Zhangyang Tan, Jinheng Li
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/13b45d27f78e4327bc6e996db4762451
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id	oai:doaj.org-article:13b45d27f78e4327bc6e996db4762451
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spelling	oai:doaj.org-article:13b45d27f78e4327bc6e996db47624512021-12-01T18:52:06ZEffects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices2158-322610.1063/5.0070957https://doaj.org/article/13b45d27f78e4327bc6e996db47624512021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0070957https://doaj.org/toc/2158-3226This experiment studied the effects of multi-layer Ti/Al electrodes, ohmic groove etching, and annealing temperature on the ohmic characteristics, output characteristics, and surface topography of AlGaN/GaN high electron mobility transistor (HEMT) devices. In the experiment, we prepared the device structure through the linear transmission model. We then used an atomic force microscope, B1500A, and other instruments to test the output characteristic curve and surface roughness of the device under each temperature and structure. After analysis and calculation, it is found that the device with an etched depth of 10 nm in the ohmic groove of the multi-layer Ti/Al electrode obtains the best characteristics when fast annealed at 850 °C for 30 s. The contact resistance value of the improved device is only 54.3% of that of the traditional structure, and the specific contact resistivity is reduced by 71.8% compared with that of the traditional structure. The surface morphology of the improved device is also smoother, and the surface roughness rms value is only 40.5% of that of the traditional structure. When it is applied to the HEMT device, the output current is increased by 40.7% compared with the traditional structure.Yanxu ZhuJianwei LiQixuan LiXiaomeng SongZhangyang TanJinheng LiAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115202-115202-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Yanxu Zhu Jianwei Li Qixuan Li Xiaomeng Song Zhangyang Tan Jinheng Li Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices
description	This experiment studied the effects of multi-layer Ti/Al electrodes, ohmic groove etching, and annealing temperature on the ohmic characteristics, output characteristics, and surface topography of AlGaN/GaN high electron mobility transistor (HEMT) devices. In the experiment, we prepared the device structure through the linear transmission model. We then used an atomic force microscope, B1500A, and other instruments to test the output characteristic curve and surface roughness of the device under each temperature and structure. After analysis and calculation, it is found that the device with an etched depth of 10 nm in the ohmic groove of the multi-layer Ti/Al electrode obtains the best characteristics when fast annealed at 850 °C for 30 s. The contact resistance value of the improved device is only 54.3% of that of the traditional structure, and the specific contact resistivity is reduced by 71.8% compared with that of the traditional structure. The surface morphology of the improved device is also smoother, and the surface roughness rms value is only 40.5% of that of the traditional structure. When it is applied to the HEMT device, the output current is increased by 40.7% compared with the traditional structure.
format	article
author	Yanxu Zhu Jianwei Li Qixuan Li Xiaomeng Song Zhangyang Tan Jinheng Li
author_facet	Yanxu Zhu Jianwei Li Qixuan Li Xiaomeng Song Zhangyang Tan Jinheng Li
author_sort	Yanxu Zhu
title	Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices
title_short	Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices
title_full	Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices
title_fullStr	Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices
title_full_unstemmed	Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices
title_sort	effects of multi-layer ti/al electrode and ohmic groove etching on ohmic characteristics of algan/gan hemt devices
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/13b45d27f78e4327bc6e996db4762451
work_keys_str_mv	AT yanxuzhu effectsofmultilayertialelectrodeandohmicgrooveetchingonohmiccharacteristicsofalganganhemtdevices AT jianweili effectsofmultilayertialelectrodeandohmicgrooveetchingonohmiccharacteristicsofalganganhemtdevices AT qixuanli effectsofmultilayertialelectrodeandohmicgrooveetchingonohmiccharacteristicsofalganganhemtdevices AT xiaomengsong effectsofmultilayertialelectrodeandohmicgrooveetchingonohmiccharacteristicsofalganganhemtdevices AT zhangyangtan effectsofmultilayertialelectrodeandohmicgrooveetchingonohmiccharacteristicsofalganganhemtdevices AT jinhengli effectsofmultilayertialelectrodeandohmicgrooveetchingonohmiccharacteristicsofalganganhemtdevices
_version_	1718404676586569728

Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices

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