Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices
This experiment studied the effects of multi-layer Ti/Al electrodes, ohmic groove etching, and annealing temperature on the ohmic characteristics, output characteristics, and surface topography of AlGaN/GaN high electron mobility transistor (HEMT) devices. In the experiment, we prepared the device s...
Guardado en:
| Autores principales: | , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/13b45d27f78e4327bc6e996db4762451 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|