Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate

The metal-insulator-semiconductor tunnel diodes with ultra thin metal surrounded gate (UTMSG) have been found to have improved transient current behavior, and the improvement is proportional to the area of the surrounding gate. The resistance induced by the thin metal gate leads to delay of inversio...

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Autores principales:	Sung-Wei Huang, Jenn-Gwo Hwu
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Metal-insulator-semiconductor (MIS) tunnel diodes transient characteristics capacitance analysis Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/13b826291ebd4937a985392abdf49443
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spelling	oai:doaj.org-article:13b826291ebd4937a985392abdf494432021-11-10T00:00:34ZCapacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate2168-673410.1109/JEDS.2021.3123332https://doaj.org/article/13b826291ebd4937a985392abdf494432021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9590486/https://doaj.org/toc/2168-6734The metal-insulator-semiconductor tunnel diodes with ultra thin metal surrounded gate (UTMSG) have been found to have improved transient current behavior, and the improvement is proportional to the area of the surrounding gate. The resistance induced by the thin metal gate leads to delay of inversion carriers under the surrounding gate. At the same time, the UTMSG devices could read the capacitance under the surrounding gate only in inversion regime, but not in accumulation and depletion regime. This could be explained by a proposed small signal circuit model. The large resistance within the metal gate blocks the AC signal coming from the surrounding gate. On the other hand, the increased inversion carrier density introduces an inversion channel, which will let the AC signal pass through. The successful reproduction of the experimental observed unusual capacitance-voltage characteristics by TCAD simulation proves the proposed model as well. Detailed simulations are implemented by varying different parameters to give a further understanding of the UTMSG device. A rough estimation of the resistance of the inversion channel is also given. The calculation shows the consistency with the proposed small signal circuit model. The UTMSG device could experience a larger change of magnitude of capacitance and hence a larger capacitance window when switching from 1 V to −0.3 V, verified by simulation. The simulation has also shown that the edge thickened oxide will only slightly modulate the capacitance of the UTMSG devices.Sung-Wei HuangJenn-Gwo HwuIEEEarticleMetal-insulator-semiconductor (MIS) tunnel diodestransient characteristicscapacitance analysisElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 1041-1048 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Metal-insulator-semiconductor (MIS) tunnel diodes transient characteristics capacitance analysis Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Metal-insulator-semiconductor (MIS) tunnel diodes transient characteristics capacitance analysis Electrical engineering. Electronics. Nuclear engineering TK1-9971 Sung-Wei Huang Jenn-Gwo Hwu Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate
description	The metal-insulator-semiconductor tunnel diodes with ultra thin metal surrounded gate (UTMSG) have been found to have improved transient current behavior, and the improvement is proportional to the area of the surrounding gate. The resistance induced by the thin metal gate leads to delay of inversion carriers under the surrounding gate. At the same time, the UTMSG devices could read the capacitance under the surrounding gate only in inversion regime, but not in accumulation and depletion regime. This could be explained by a proposed small signal circuit model. The large resistance within the metal gate blocks the AC signal coming from the surrounding gate. On the other hand, the increased inversion carrier density introduces an inversion channel, which will let the AC signal pass through. The successful reproduction of the experimental observed unusual capacitance-voltage characteristics by TCAD simulation proves the proposed model as well. Detailed simulations are implemented by varying different parameters to give a further understanding of the UTMSG device. A rough estimation of the resistance of the inversion channel is also given. The calculation shows the consistency with the proposed small signal circuit model. The UTMSG device could experience a larger change of magnitude of capacitance and hence a larger capacitance window when switching from 1 V to −0.3 V, verified by simulation. The simulation has also shown that the edge thickened oxide will only slightly modulate the capacitance of the UTMSG devices.
format	article
author	Sung-Wei Huang Jenn-Gwo Hwu
author_facet	Sung-Wei Huang Jenn-Gwo Hwu
author_sort	Sung-Wei Huang
title	Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate
title_short	Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate
title_full	Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate
title_fullStr	Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate
title_full_unstemmed	Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate
title_sort	capacitance analysis of transient behavior improved metal-insulator-semiconductor tunnel diodes with ultra thin metal surrounded gate
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/13b826291ebd4937a985392abdf49443
work_keys_str_mv	AT sungweihuang capacitanceanalysisoftransientbehaviorimprovedmetalinsulatorsemiconductortunneldiodeswithultrathinmetalsurroundedgate AT jenngwohwu capacitanceanalysisoftransientbehaviorimprovedmetalinsulatorsemiconductortunneldiodeswithultrathinmetalsurroundedgate
_version_	1718440721858428928

Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate

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