Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate
The metal-insulator-semiconductor tunnel diodes with ultra thin metal surrounded gate (UTMSG) have been found to have improved transient current behavior, and the improvement is proportional to the area of the surrounding gate. The resistance induced by the thin metal gate leads to delay of inversio...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/13b826291ebd4937a985392abdf49443 |
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