Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe

Most work on nonreciprocal transport is limited to cryogenic temperatures due to the low Rashba spin splitting energy. Here, the authors report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states.

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Autores principales:	Yan Li, Yang Li, Peng Li, Bin Fang, Xu Yang, Yan Wen, Dong-xing Zheng, Chen-hui Zhang, Xin He, Aurélien Manchon, Zhao-Hua Cheng, Xi-xiang Zhang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/13b974b5173c48b58bb8b71edbcd58d9
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spelling	oai:doaj.org-article:13b974b5173c48b58bb8b71edbcd58d92021-12-02T13:51:14ZNonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe10.1038/s41467-020-20840-72041-1723https://doaj.org/article/13b974b5173c48b58bb8b71edbcd58d92021-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-20840-7https://doaj.org/toc/2041-1723Most work on nonreciprocal transport is limited to cryogenic temperatures due to the low Rashba spin splitting energy. Here, the authors report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states.Yan LiYang LiPeng LiBin FangXu YangYan WenDong-xing ZhengChen-hui ZhangXin HeAurélien ManchonZhao-Hua ChengXi-xiang ZhangNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Yan Li Yang Li Peng Li Bin Fang Xu Yang Yan Wen Dong-xing Zheng Chen-hui Zhang Xin He Aurélien Manchon Zhao-Hua Cheng Xi-xiang Zhang Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
description	Most work on nonreciprocal transport is limited to cryogenic temperatures due to the low Rashba spin splitting energy. Here, the authors report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states.
format	article
author	Yan Li Yang Li Peng Li Bin Fang Xu Yang Yan Wen Dong-xing Zheng Chen-hui Zhang Xin He Aurélien Manchon Zhao-Hua Cheng Xi-xiang Zhang
author_facet	Yan Li Yang Li Peng Li Bin Fang Xu Yang Yan Wen Dong-xing Zheng Chen-hui Zhang Xin He Aurélien Manchon Zhao-Hua Cheng Xi-xiang Zhang
author_sort	Yan Li
title	Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
title_short	Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
title_full	Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
title_fullStr	Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
title_full_unstemmed	Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
title_sort	nonreciprocal charge transport up to room temperature in bulk rashba semiconductor α-gete
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/13b974b5173c48b58bb8b71edbcd58d9
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Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe

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