Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe

Most work on nonreciprocal transport is limited to cryogenic temperatures due to the low Rashba spin splitting energy. Here, the authors report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states.

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Auteurs principaux: Yan Li, Yang Li, Peng Li, Bin Fang, Xu Yang, Yan Wen, Dong-xing Zheng, Chen-hui Zhang, Xin He, Aurélien Manchon, Zhao-Hua Cheng, Xi-xiang Zhang
Format: article
Langue:EN
Publié: Nature Portfolio 2021
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Accès en ligne:https://doaj.org/article/13b974b5173c48b58bb8b71edbcd58d9
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