Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect

Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-...

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Autores principales:	Yan Fan, Tao Wang, Yinwei Qiu, Yinli Yang, Qiubo Pan, Jun Zheng, Songwei Zeng, Wei Liu, Gang Lou, Liang Chen
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	undoped p–n junction vertical p–n junction graphene oxide Organic chemistry QD241-441
Acceso en línea:	https://doaj.org/article/13f3166181364a9b9f01e0ac1c875650
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spelling	oai:doaj.org-article:13f3166181364a9b9f01e0ac1c8756502021-11-25T18:27:47ZPure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect10.3390/molecules262268491420-3049https://doaj.org/article/13f3166181364a9b9f01e0ac1c8756502021-11-01T00:00:00Zhttps://www.mdpi.com/1420-3049/26/22/6849https://doaj.org/toc/1420-3049Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.Yan FanTao WangYinwei QiuYinli YangQiubo PanJun ZhengSongwei ZengWei LiuGang LouLiang ChenMDPI AGarticleundoped p–n junctionvertical p–n junctiongraphene oxideOrganic chemistryQD241-441ENMolecules, Vol 26, Iss 6849, p 6849 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	undoped p–n junction vertical p–n junction graphene oxide Organic chemistry QD241-441
spellingShingle	undoped p–n junction vertical p–n junction graphene oxide Organic chemistry QD241-441 Yan Fan Tao Wang Yinwei Qiu Yinli Yang Qiubo Pan Jun Zheng Songwei Zeng Wei Liu Gang Lou Liang Chen Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect
description	Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.
format	article
author	Yan Fan Tao Wang Yinwei Qiu Yinli Yang Qiubo Pan Jun Zheng Songwei Zeng Wei Liu Gang Lou Liang Chen
author_facet	Yan Fan Tao Wang Yinwei Qiu Yinli Yang Qiubo Pan Jun Zheng Songwei Zeng Wei Liu Gang Lou Liang Chen
author_sort	Yan Fan
title	Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect
title_short	Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect
title_full	Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect
title_fullStr	Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect
title_full_unstemmed	Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect
title_sort	pure graphene oxide vertical p–n junction with remarkable rectification effect
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/13f3166181364a9b9f01e0ac1c875650
work_keys_str_mv	AT yanfan puregrapheneoxideverticalpnjunctionwithremarkablerectificationeffect AT taowang puregrapheneoxideverticalpnjunctionwithremarkablerectificationeffect AT yinweiqiu puregrapheneoxideverticalpnjunctionwithremarkablerectificationeffect AT yinliyang puregrapheneoxideverticalpnjunctionwithremarkablerectificationeffect AT qiubopan puregrapheneoxideverticalpnjunctionwithremarkablerectificationeffect AT junzheng puregrapheneoxideverticalpnjunctionwithremarkablerectificationeffect AT songweizeng puregrapheneoxideverticalpnjunctionwithremarkablerectificationeffect AT weiliu puregrapheneoxideverticalpnjunctionwithremarkablerectificationeffect AT ganglou puregrapheneoxideverticalpnjunctionwithremarkablerectificationeffect AT liangchen puregrapheneoxideverticalpnjunctionwithremarkablerectificationeffect
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Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect

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